Nanoelectronics Using Metal–Insulator Transition
Metal–insulator transition (MIT) coupled with an ultrafast, significant, and reversible resistive
change in Mott insulators has attracted tremendous interest for investigation into next …
change in Mott insulators has attracted tremendous interest for investigation into next …
V2O5 gas sensors: A review
Vanadium pentoxide has attracted the researchers' interest for its potential gas sensing
applications. Its unique electrical and optical properties make it very interesting for the …
applications. Its unique electrical and optical properties make it very interesting for the …
[HTML][HTML] Room temperature Mott metal–insulator transition in V2O3 compounds induced via strain-engineering
Vanadium sesquioxide (V 2 O 3) is an archetypal Mott insulator in which the atomic positions
and electron correlations change as temperature, pressure, and doping are varied, giving …
and electron correlations change as temperature, pressure, and doping are varied, giving …
Giant nonvolatile resistive switching in a Mott oxide and ferroelectric hybrid
Controlling the electronic properties of oxides that feature a metal–insulator transition (MIT)
is a key requirement for developing a new class of electronics often referred to as …
is a key requirement for developing a new class of electronics often referred to as …
Disentangling Structural and Electronic Properties in V2O3 Thin Films: A Genuine Nonsymmetry Breaking Mott Transition
Phase transitions are key in determining and controlling the quantum properties of
correlated materials. Here, by using the combination of material synthesis and photoelectron …
correlated materials. Here, by using the combination of material synthesis and photoelectron …
[HTML][HTML] Recent progress on high power impulse magnetron sputtering (HiPIMS): The challenges and applications in fabricating VO2 thin film
High power impulse magnetron sputtering (HiPIMS) is well known in modern physical vapor
deposition (PVD) owing to its high peak power density, high degree of ionization, high …
deposition (PVD) owing to its high peak power density, high degree of ionization, high …
Positive and Negative Pressure Regimes in Anisotropically Strained V2O3 Films
The metal‐insulator phase transitions in V2O3 are considered archetypal manifestations of
Mott physics. Despite decades of research, the effects of doping, pressure, and anisotropic …
Mott physics. Despite decades of research, the effects of doping, pressure, and anisotropic …
Chemical, structural and electronic properties of ultrathin V2O3 films on Al2O3 substrate: Implications in Mott-like transitions
V 2 O 3 presents a complex interrelationship between the metal–insulator transition and the
structural rhombohedral-monoclinic one in temperature, as a function of sample thickness …
structural rhombohedral-monoclinic one in temperature, as a function of sample thickness …
Orientation-dependent strain effects on the metal-insulator transitions in thin films
GD Zhang, L Hu, M Zhu, RH Wei, RR Zhang, WH Song… - Physical Review B, 2022 - APS
V 2 O 3 is an archetypical Mott material which exhibits Cr doping and/or temperature-
induced paramagnetic metal to paramagnetic insulator/antiferromagnetic insulator (PM …
induced paramagnetic metal to paramagnetic insulator/antiferromagnetic insulator (PM …
Metal to insulator transition at the surface of V2O3 thin films: An in-situ view
V 2 O 3 has long been studied as a prototypical strongly correlated material. The difficulty in
obtaining clean, well ordered surfaces, however, hindered the use of surface sensitive …
obtaining clean, well ordered surfaces, however, hindered the use of surface sensitive …