Nanoelectronics Using Metal–Insulator Transition

YJ Lee, Y Kim, H Gim, K Hong, HW Jang - Advanced Materials, 2024 - Wiley Online Library
Metal–insulator transition (MIT) coupled with an ultrafast, significant, and reversible resistive
change in Mott insulators has attracted tremendous interest for investigation into next …

V2O5 gas sensors: A review

R Alrammouz, M Lazerges, J Pironon, IB Taher… - Sensors and Actuators A …, 2021 - Elsevier
Vanadium pentoxide has attracted the researchers' interest for its potential gas sensing
applications. Its unique electrical and optical properties make it very interesting for the …

[HTML][HTML] Room temperature Mott metal–insulator transition in V2O3 compounds induced via strain-engineering

P Homm, M Menghini, JW Seo, S Peters, JP Locquet - APL Materials, 2021 - pubs.aip.org
Vanadium sesquioxide (V 2 O 3) is an archetypal Mott insulator in which the atomic positions
and electron correlations change as temperature, pressure, and doping are varied, giving …

Giant nonvolatile resistive switching in a Mott oxide and ferroelectric hybrid

P Salev, J Del Valle, Y Kalcheim… - Proceedings of the …, 2019 - National Acad Sciences
Controlling the electronic properties of oxides that feature a metal–insulator transition (MIT)
is a key requirement for developing a new class of electronics often referred to as …

Disentangling Structural and Electronic Properties in V2O3 Thin Films: A Genuine Nonsymmetry Breaking Mott Transition

F Mazzola, SK Chaluvadi, V Polewczyk, D Mondal… - Nano Letters, 2022 - ACS Publications
Phase transitions are key in determining and controlling the quantum properties of
correlated materials. Here, by using the combination of material synthesis and photoelectron …

[HTML][HTML] Recent progress on high power impulse magnetron sputtering (HiPIMS): The challenges and applications in fabricating VO2 thin film

H Zhang, JS Cherng, Q Chen - AIP Advances, 2019 - pubs.aip.org
High power impulse magnetron sputtering (HiPIMS) is well known in modern physical vapor
deposition (PVD) owing to its high peak power density, high degree of ionization, high …

Positive and Negative Pressure Regimes in Anisotropically Strained V2O3 Films

E Barazani, D Das, C Huang, A Rakshit… - Advanced Functional …, 2023 - Wiley Online Library
The metal‐insulator phase transitions in V2O3 are considered archetypal manifestations of
Mott physics. Despite decades of research, the effects of doping, pressure, and anisotropic …

Chemical, structural and electronic properties of ultrathin V2O3 films on Al2O3 substrate: Implications in Mott-like transitions

V Polewczyk, SK Chaluvadi, D Dagur, F Mazzola… - Applied Surface …, 2023 - Elsevier
V 2 O 3 presents a complex interrelationship between the metal–insulator transition and the
structural rhombohedral-monoclinic one in temperature, as a function of sample thickness …

Orientation-dependent strain effects on the metal-insulator transitions in thin films

GD Zhang, L Hu, M Zhu, RH Wei, RR Zhang, WH Song… - Physical Review B, 2022 - APS
V 2 O 3 is an archetypical Mott material which exhibits Cr doping and/or temperature-
induced paramagnetic metal to paramagnetic insulator/antiferromagnetic insulator (PM …

Metal to insulator transition at the surface of V2O3 thin films: An in-situ view

M Caputo, J Jandke, E Cappelli, SK Chaluvadi… - Applied Surface …, 2022 - Elsevier
V 2 O 3 has long been studied as a prototypical strongly correlated material. The difficulty in
obtaining clean, well ordered surfaces, however, hindered the use of surface sensitive …