In this research, an examination of a single event gate rupture (SEGR) of an insulated gate
bipolar transistor (IGBT), caused by a heavy ion striking the device at normal incidence on …

In this article, a gate engineering technique is used in Insulated gate bipolar transistor
(IGBT) for fast switching applications. The modification consists of stepped oxide pattern at …

In this work, we design and simulate a high-performance vertical power MOSFET with a
charge balanced drift layer, which modulates the RON-BV relation from super quadratic to …

A new heteromaterial planar-gate superjunction insulated-gate bipolar transistor (HG IGBT)
is proposed herein. It consists of stepped gate oxides with thickness of 50 nm, 100 nm, and …

In this article, an innovative 1200 V insulated gate bipolar transistor (IGBT) is proposed with
NPN three polysilicon layers staked gate (PG) structure. This novel gate structure can be …

This paper proposed a 1.4 kV-class superjunction vertical IGBT (DMG-SJIGBT) with gate
workfunction variation along with stepped oxide thickness. Two distinct workfunction …

In today's semiconductor devices demands are increasing day by day in consumer
electronics. For example, IoT back bone of current consumer electronics. Everything is …

An improved semi-superjunction insulated gate bipolar transistor (IGBT) is presented. The
carrier injection efficiency is enhanced by using a plasma enhancement layer in the device …

In this paper, an asymmetric semi-superjunction (SJ) insulated gate bipolar transistor (IGBT)
is proposed and investigated. The buffer layer of proposed device is split into two unequal …

In paper, we have investigated and analyzed the single event gate rupture (SEGR) on the
Insulated gate bipolar transistor (IGBT) where the heavy ion strikes on the device at normal …