On measuring the structure stability for small silver clusters to use them in plasmonics
One of the new applications of silver nanoparticles is their use in plasmonic applications
determined by the strong interaction of the electromagnetic wave and free electrons in …
determined by the strong interaction of the electromagnetic wave and free electrons in …
Formation of Ag nanoparticles in Si (100) wafers by single and multiple low energy Ag ions implantation
We investigated the structural and optical changes of Si (100) induced by single or multiple
low energy silver ion irradiation with fluences up to 10 16 ions/cm 2. The irradiated samples …
low energy silver ion irradiation with fluences up to 10 16 ions/cm 2. The irradiated samples …
Formation of Au-Ag alloy nanoparticles in amorphous silicon using sequential ion implantation
M Novaković, M Popović, P Noga, D Vaňa… - Nuclear Instruments and …, 2020 - Elsevier
Au-Ag alloy nanoparticles were formed into amorphous silicon by sequential ion
implantation of Au and Ag. Monocrystalline Si was amorphized at the initial moment of …
implantation of Au and Ag. Monocrystalline Si was amorphized at the initial moment of …
Optical reflectance of silicon implanted by silver ions
AL Stepanov, YN Osin, VV Vorobev… - Optoelectronics and …, 2017 - oam-rc.inoe.ro
The new results on the optical reflection of the Si surface layers implanted by silver ions at
low energies of 30 keV over a wide dose range from 5.0 x 1014 to 1.5 x 1017 ion/cm2 are …
low energies of 30 keV over a wide dose range from 5.0 x 1014 to 1.5 x 1017 ion/cm2 are …
Characterization of the surface of silver ion-implanted silicon by optical reflectance
AL Stepanov, VV Vorobev, VI Nuzhdin… - Journal of Applied …, 2017 - Springer
The optical reflection of the surface of silicon implanted with Ag+ ions at low energy of 30
keV in a wide dosage range of 5.0· 10 14–1.5· 10 17 ion/cm 2 was studied in parallel with …
keV in a wide dosage range of 5.0· 10 14–1.5· 10 17 ion/cm 2 was studied in parallel with …
Improvement in the photocurrent collection due to enhanced absorption of light by synthesizing staggered layers of silver nanoclusters in silicon
MS Dhoubhadel, WJ Lakshantha… - AIP Conference …, 2015 - pubs.aip.org
The quest for increased efficiency of solar cells has driven the research in synthesizing
photovoltaic cells involving Si based materials. The efficiency of solar cells involving …
photovoltaic cells involving Si based materials. The efficiency of solar cells involving …
Формирование композиционного материала на основе GeSi с наночастицами Ag методом ионной имплантации
РИ Баталов, ВВ Воробьев, ВИ Нуждин… - Журнал технической …, 2016 - mathnet.ru
Представлены результаты сравнительного исследования структурных и оптических
свойств композиционных слоев, сформированных имплантацией …
свойств композиционных слоев, сформированных имплантацией …
Pulse ion annealing of silicon layers with silver nanoparticles formed by ion implantation
AL Stepanov, RI Batalov, RM Bayazitov, AM Rogov - Vacuum, 2020 - Elsevier
The paper presents the results of Si surface modification created by implantation with Ag+
ions at energy of 30 keV, current density of 8 μA/cm 2 for various doses from 6.0· 10 15 to …
ions at energy of 30 keV, current density of 8 μA/cm 2 for various doses from 6.0· 10 15 to …
Fabrication of composite based on GeSi with Ag nanoparticles using ion implantation
RI Batalov, VV Vorobev, VI Nuzhdin, VF Valeev… - Technical Physics, 2016 - Springer
Comparative analysis of the structural and optical properties of composite layers fabricated
with the aid of implantation of single-crystalline silicon (c-Si) using Ge+(40 keV/1× 10 17 …
with the aid of implantation of single-crystalline silicon (c-Si) using Ge+(40 keV/1× 10 17 …
АНАЛИЗ ПОВЕРХНОСТИ КРЕМНИЯ, ИМПЛАНТИРОВАННОГО ИОНАМИ СЕРЕБРА, ПО СПЕКТРАМ ОПТИЧЕСКОГО ОТРАЖЕНИЯ
АЛ Степанов, ВВ Воробьев, ВИ Нуждин… - Журнал прикладной …, 2017 - zhps.ejournal.by
Аннотация Проведены исследования оптического отражения поверхности Si,
имплантированного ионами Ag+ при низкой энергии 30 кэВ в широком интервале доз …
имплантированного ионами Ag+ при низкой энергии 30 кэВ в широком интервале доз …