Due to the difficulty of p-type doping in β-Ga 2 O 3, NiO/β-Ga 2 O 3 heterojunction becomes
a promising candidate for fabricating bipolar devices. In this work, we performed a …

Ga 2 O 3-based heterojunction photodetectors integrate Ga 2 O 3 with partner
semiconductors via deposition techniques to obtain a high-quality interface, resulting in …

Most heterojunction photodetectors (PDs) can detect single-band, dual-band, or even multi-
band light. However, the ability to adjust the spectral response band of the PD remains a …

Integrating two-dimensional ultra-wide band gap hexagonal boron nitride (h-BN) on β-Ga 2
O 3 surface into van der Waals heterostructures is of great interest for developing novel high …

In this reported study, conductive composite conversion films on an AZ91D magnesium alloy
were prepared by adding Ga 3+ to a deposition solution that contained molybdenum …

Abstract β-Ga2O3 is regarded as one of the best materials for application in deep space
exploration; thus, research on β-Ga2O3-related radiation damage is necessary for the use of …

Ga 2 O 3 is an ultra-wide bandgap semiconductor with various advantages but limited by its
low carrier mobility. Utilizing charge separation in heterostructures to improve carrier …

In this manuscript, epitaxial beta-Ga 2 O 3 films were prepared on 4H–SiC substrates via low-
pressure chemical vapor deposition. β-Ga 2 O 3 thin films with a (− 201) preferred …

There is a tradeoff between the high photocurrent and the low dark current for the gallium
oxide (Ga2O3) metal–semiconductor–metal photodetectors (PDs). Achieving a balance …

The electric properties and chemical and thermal stability of gallium oxide β-Ga2O3 make it
a promising material for a wide variety of electronic devices, including chemiresistive gas …