Evolution of the ferroelectric properties of AlScN film by electrical cycling with an inhomogeneous field distribution

KD Kim, YB Lee, SH Lee, IS Lee… - Advanced Electronic …, 2023 - Wiley Online Library
This work investigates the evolution of the ferroelectric (FE) performance of the sputtered
aluminum scandium nitride (AlScN) thin film, which has a high remanent polarization (Pr,> …

A possible origin of the large leakage current in ferroelectric Al1− x Sc x N films

J Kataoka, SL Tsai, T Hoshii… - Japanese Journal of …, 2021 - iopscience.iop.org
Leakage current analysis on 50 nm thick ferroelectric Al 0.78 Sc 0.22 N films with TiN
electrodes has been performed. The electron conduction followed Schottky emission with an …

Temperature and frequency effects on electrical and dielectric properties of n-4H SiC based metal–insulator-semiconductor (MIS) diode interlayered with Si3N4 thin …

HH Gullu, DE Yildiz - Journal of Materials Science: Materials in Electronics, 2020 - Springer
Abstract Effects of frequency and temperature variations on the electrical properties of Au/Si
3 N 4/n-4H SiC diode were investigated. The diode responses to the change in frequency …

Thermionic Emission in Artificially Structured Single‐Crystalline Elemental Metal/Compound Semiconductor Superlattices

RS Rawat, D Rao, S Rudra, N Raut… - Advanced …, 2024 - Wiley Online Library
Metal/semiconductor superlattices represent a fascinating frontier in materials science and
nanotechnology, where alternating layers of metals and semiconductors are precisely …

[HTML][HTML] Structural properties and epitaxial relation of cubic rock salt ScxAl1− xN/ScN/Si

S Mihalic, E Wade, C Lüttich, F Hörich, C Sun… - Journal of Applied …, 2023 - pubs.aip.org
ScN in the rock salt structure is a well-investigated material due to its desirable properties
like the high hardness or large thermal conductivity. Recent computations by Adamski et …

Electronic structure of rare-earth semiconducting ErN thin films determined with synchrotron radiation photoemission spectroscopy and first-principles analysis

K Upadhya, R Kumar, M Baral, S Tripathi, SN Jha… - Physical Review B, 2022 - APS
Erbium nitride (ErN) is an emerging rocksalt rare-earth semiconducting pnictide and has
attracted significant interest in recent years for its potential applications in thermoelectric …

Clustering of oxygen point defects in transition metal nitrides

R Kumar, S Nayak, M Garbrecht, V Bhatia… - Journal of Applied …, 2021 - pubs.aip.org
Point defects create exotic properties in materials such as defect-induced luminescence in
wide-bandgap semiconductors, magnetism in nonmagnetic materials, single-photon …

Interfacial chemistry and electronic structure of epitaxial lattice-matched TiN/Al0. 72Sc0. 28N metal/semiconductor superlattices determined with soft x-ray scattering

B Biswas, S Nayak, V Bhatia, AIK Pillai… - Journal of Vacuum …, 2020 - pubs.aip.org
Epitaxial lattice-matched TiN/(Al, Sc) N metal/semiconductor superlattices have attracted
significant interest in recent years for their potential applications in thermionic emission …

Phononic bandgap and phonon anomalies in HfN and HfN/ScN metal/semiconductor superlattices measured with inelastic x-ray scattering

S Chakraborty, H Uchiyama, M Garbrecht… - Applied Physics …, 2020 - pubs.aip.org
Epitaxial metal/semiconductor superlattice heterostructures with lattice-matched abrupt
interfaces and suitable Schottky barrier heights are attractive for thermionic energy …

Analytical assessment of Schottky diodes based on CdS/Si heterostructure: current, capacitance, and conductance analysis using TCAD

J Rajendran, L Raju, L Bojaraj - Indian Journal of Physics, 2024 - Springer
An investigation was conducted on the characteristics of current and voltage in a
heterostructure setup comprising a CdS/Silicon Schottky barrier diode. The investigation …