Compute in‐memory with non‐volatile elements for neural networks: A review from a co‐design perspective

W Haensch, A Raghunathan, K Roy… - Advanced …, 2023 - Wiley Online Library
Deep learning has become ubiquitous, touching daily lives across the globe. Today,
traditional computer architectures are stressed to their limits in efficiently executing the …

Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide

J Lee, K Yang, JY Kwon, JE Kim, DI Han, DH Lee… - Nano …, 2023 - Springer
HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices
owing to its excellent electrical properties and compatibility with complementary metal oxide …

Concealable physically unclonable function chip with a memristor array

B Gao, B Lin, Y Pang, F Xu, Y Lu, YC Chiu, Z Liu… - Science …, 2022 - science.org
A physically unclonable function (PUF) is a creditable and lightweight solution to the mistrust
in billions of Internet of Things devices. Because of this remarkable importance, PUF need to …

Binary convolutional neural network on RRAM

T Tang, L Xia, B Li, Y Wang… - 2017 22nd Asia and South …, 2017 - ieeexplore.ieee.org
Recent progress in the machine learning field makes low bit-level Convolutional Neural
Networks (CNNs), even CNNs with binary weights and binary neurons, achieve satisfying …

Technological exploration of RRAM crossbar array for matrix-vector multiplication

L Xia, P Gu, B Li, T Tang, X Yin, W Huangfu… - Journal of Computer …, 2016 - Springer
Matrix-vector multiplication is the key operation for many computationally intensive
algorithms. The emerging metal oxide resistive switching random access memory (RRAM) …

Fault-tolerant training with on-line fault detection for RRAM-based neural computing systems

L Xia, M Liu, X Ning, K Chakrabarty… - Proceedings of the 54th …, 2017 - dl.acm.org
An RRAM-based computing system (RCS) is an attractive hardware platform for
implementing neural computing algorithms. Online training for RCS enables hardware …

Stuck-at fault tolerance in RRAM computing systems

L Xia, W Huangfu, T Tang, X Yin… - IEEE Journal on …, 2017 - ieeexplore.ieee.org
Emerging metal-oxide resistive switching random-access memory (RRAM) devices and
RRAM crossbars have demonstrated their potential in boosting the speed and energy …

Improved Switching Stability and the Effect of an Internal Series Resistor in HfO2/TiOx Bilayer ReRAM Cells

A Hardtdegen, C La Torre, F Cüppers… - IEEE transactions on …, 2018 - ieeexplore.ieee.org
Bipolar redox-based resistive random-access memory cells are intensively studied for new
storage class memory and beyond von Neumann computing applications. However, the …

Prospect and challenges of analog switching for neuromorphic hardware

W Banerjee, RD Nikam, H Hwang - Applied Physics Letters, 2022 - pubs.aip.org
To inaugurate energy-efficient hardware as a solution to complex tasks, information
processing paradigms shift from von Neumann to non-von Neumann computing …

Forming‐free grain boundary engineered hafnium oxide resistive random access memory devices

S Petzold, A Zintler, R Eilhardt, E Piros… - Advanced Electronic …, 2019 - Wiley Online Library
A model device based on an epitaxial stack combination of titanium nitride (111) and
monoclinic hafnia (11 1¯) is grown onto ac‐cut Al2O3‐substrate to target the role of grain …