Precise current sensing is essential for several power electronics' protection, control, and
reliability mechanisms. Even so, WBG power converters will likely struggle to develop a …

Cascaded H-Bridge (CHB) topology is one of the attractive topologies in high-power
medium-voltage motor drive applications due to its modularity and scalability. Research in …

In recent years, an increasing trend towards GaN integration can be observed, enabled by
the lateral structure of the GaN technology. A key improvement over a discrete …

Enhanced power density factors can be achieved in the new generation of power electronics
by utilizing wide-bandgap semiconductor switching devices with higher switching speeds …

The three-phase four-wire voltage source inverter (3P4W VSI) is widely used in applications
like uninterrupted power supply (UPS) and bidirectional onboard charger. The increasing …

Herein, we demonstrated an “interposer”-style integration of In 2 O 3 FET-based gate-driver
circuitry wire bonded to an AlGaN/GaN high electron mobility transistor (HEMT) device …

Ga2O3 is an ultra-wide-bandgap semiconductor that is receiving considerable attention due
to its promising applications in high-frequency, high-power and high-temperature settings. It …

This paper presents junction temperature estimation method of direct-drive Gallium Nitride
(GaN) high electron mobility transistors (HEMTs) in two-level inverters for driving permanent …

This project aims to find the compressive strength of the recycled AA5051 alloy with and
without reinforcing novel SiO2 using the stir casting method. Materials and Methods: The …

The work seeks to intensification the accurateness of identifying human emotion from audio
data through comparing a innovative Artificial Bee Colony (ABC) technique toward Particle …