Design of the CMOS inverter‐based amplifier: A quantitative approach
SM Sharroush - International Journal of Circuit Theory and …, 2019 - Wiley Online Library
The CMOS inverter can be used as an amplifier if properly biased in the transition region of
its voltage‐transfer characteristics (VTC). In this paper, the design of this amplifier is …
its voltage‐transfer characteristics (VTC). In this paper, the design of this amplifier is …
A predischarged bitline 1T-1C DRAM readout scheme
SM Sharroush - Microelectronics Journal, 2019 - Elsevier
It is well known that the dynamic random-access memory (DRAM) is one of the main means
for primary storage. However, the conventional readout scheme of the one-transistor one …
for primary storage. However, the conventional readout scheme of the one-transistor one …
Inverter‐based voltage‐controlled and programmable comparators
SM Sharroush - International Journal of Circuit Theory and …, 2020 - Wiley Online Library
Comparators are very important circuits that can be found in a variety of applications,
especially comparators whose reference level can be controlled. In this paper, a voltage …
especially comparators whose reference level can be controlled. In this paper, a voltage …
Time-domain readout of 1T–1C DRAM cells
SM Sharroush - Journal of Circuits, Systems and Computers, 2018 - World Scientific
The conventional readout of one-transistor–one-capacitor dynamic random-access
memories (1T–1C DRAMs) depends on using a sense amplifier to develop the bitline …
memories (1T–1C DRAMs) depends on using a sense amplifier to develop the bitline …
A novel low-latency DRAM based on the bitline-discharge rate
SM Sharroush - International Journal of Electronics, 2018 - Taylor & Francis
As well known by computer architects, the performance gap between the processor and the
memory has been increasing over the years. This causes what is known as the memory wall …
memory has been increasing over the years. This causes what is known as the memory wall …
A bitline-driven 1T-1C DRAM readout scheme
SM Sharroush - 2016 International Conference on Electrical …, 2016 - ieeexplore.ieee.org
In this paper, a novel readout scheme for the one-transistor one capacitor (1T-1C) DRAM
will be introduced. The scheme depends on charging the bitline as well as the cell-storage …
will be introduced. The scheme depends on charging the bitline as well as the cell-storage …
[PDF][PDF] Performance Analysis of 1T1C DRAM Memory Array
N Singla - academia.edu
Memory plays an essential role in the design of electronic systems where storage of data is
required. DRAMs (Dynamic Random Access Memory) are widely used in computer system …
required. DRAMs (Dynamic Random Access Memory) are widely used in computer system …
Novel CMOS-Inverter Based VGA and VCRO
SM Sharroush - 2018 International Japan-Africa Conference on …, 2018 - ieeexplore.ieee.org
In this paper, a novel variable-gain amplifier (VGA) and a novel voltage-controlled ring
oscillator (VCRO) are proposed. The two proposed schemes depend on the same controlled …
oscillator (VCRO) are proposed. The two proposed schemes depend on the same controlled …