A review on effect of various high-k dielectric materials on the performance of FinFET device
J Kumar, S Birla, G Agarwal - Materials Today: Proceedings, 2023 - Elsevier
The scalability of bulk CMOS faced various possible issues due to inherent material and
process innovation constraints. Alternatively, transistor devices with supplementary gates …
process innovation constraints. Alternatively, transistor devices with supplementary gates …
[HTML][HTML] Comprehensive Review of FinFET Technology: History, Structure, Challenges, Innovations, and Emerging Sensing Applications
The surge in demand for 3D MOSFETs, such as FinFETs, driven by recent technological
advances, is explored in this review. FinFETs, positioned as promising alternatives to bulk …
advances, is explored in this review. FinFETs, positioned as promising alternatives to bulk …
Performance reliability of ultra-thin Si-SiO2, Si-Al2O3, Si-ZrO2 and Si-HfO2 interface in rectangular steep retrograded nano-regimes devices
RR Thakur, P Singh - Microelectronics Reliability, 2019 - Elsevier
Abstracts Due to continuous rapid miniaturization of the MOSFET based Integrated Circuits;
it is becoming difficult to suppress the gate leakage at the oxide-silicon interface using …
it is becoming difficult to suppress the gate leakage at the oxide-silicon interface using …
White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO2/Al2O3 and Al2O3/HfO2/Al2O3 Gate Dielectric Stacks for High Total …
H Zhao, Z Zheng, H Zhu, L Wang, B Li… - … on Device and …, 2023 - ieeexplore.ieee.org
White x-ray radiation effects in metal-oxide-semiconductor (MOS) capacitors with
HfO2/Al2O3 (H/A) two-layer and Al2O3/HfO2/Al2O3 (A/H/A) three-layer gate dielectric stacks …
HfO2/Al2O3 (H/A) two-layer and Al2O3/HfO2/Al2O3 (A/H/A) three-layer gate dielectric stacks …
Analysis of interface trap charges and densities using capacitance-voltage (CV) and conductance voltage (GV) methods in steep retrograded Al2O3, ZrO2 and HfO2 …
RR Thakur, P Singh - AIP Conference Proceedings, 2018 - pubs.aip.org
In this paper, a simulation study has been carried out to determine the effects of different
gate oxide on the electrical performance of a Silicon channel steep retrograded doped n …
gate oxide on the electrical performance of a Silicon channel steep retrograded doped n …
Investigation of Leakage Parameters of Hafnium Silicate (HfSiO4) Based Nano-Scale MOS Circuits
J Ahmad - 2020 - search.proquest.com
Abstract High-k based Metal Oxide Semiconductor (MOS) capacitors are readily used in next
generation nano scaled Complementary Metal Oxide Semiconductor (CMOS) circuits. These …
generation nano scaled Complementary Metal Oxide Semiconductor (CMOS) circuits. These …