Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells

G Dingemans, WMM Kessels - … of Vacuum Science & Technology A, 2012 - pubs.aip.org
The reduction in electronic recombination losses by the passivation of silicon surfaces is a
critical enabler for high-efficiency solar cells. In 2006, aluminum oxide (Al 2 O 3) nanolayers …

Progress in solar cells from hydrogenated amorphous silicon

M Stuckelberger, R Biron, N Wyrsch, FJ Haug… - … and Sustainable Energy …, 2017 - Elsevier
Hydrogenated amorphous silicon (a-Si: H) has been used for decades—doped and as
intrinsic absorber layers—in thin-film silicon solar cells. Whereas their effiency was improved …

Industrial-scale deposition of nanocrystalline silicon oxide for 26.4%-efficient silicon heterojunction solar cells with copper electrodes

C Yu, K Gao, CW Peng, C He, S Wang, W Shi, V Allen… - Nature Energy, 2023 - nature.com
To unlock the full performance potential of silicon heterojunction solar cells requires
reductions of parasitic absorption and shadowing losses. Yet the translation of the …

25.11% efficiency silicon heterojunction solar cell with low deposition rate intrinsic amorphous silicon buffer layers

X Ru, M Qu, J Wang, T Ruan, M Yang, F Peng… - Solar energy materials …, 2020 - Elsevier
Here we report a certified efficiency of up to 25.11% for silicon heterojunction (SHJ) solar
cells on a full size n-type M2 monocrystalline-silicon (c-Si) wafer (total area, 244.5 cm 2). An …

Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment

A Descoeudres, L Barraud, S De Wolf, B Strahm… - Applied Physics …, 2011 - pubs.aip.org
Silicon heterojunction solar cells have high open-circuit voltages thanks to excellent
passivation of the wafer surfaces by thin intrinsic amorphous silicon (a-Si: H) layers …

Damage at hydrogenated amorphous/crystalline silicon interfaces by indium tin oxide overlayer sputtering

B Demaurex, S De Wolf, A Descoeudres… - Applied Physics …, 2012 - pubs.aip.org
Damage of the hydrogenated amorphous/crystalline silicon interface passivation during
transparent conductive oxide sputtering is reported. This occurs in the fabrication process of …

Nature of doped a-Si: H/c-Si interface recombination

S De Wolf, M Kondo - Journal of Applied Physics, 2009 - pubs.aip.org
Doped hydrogenated amorphous silicon (a-Si: H) films of only a few nanometer thin find
application in a-Si: H/crystalline silicon heterojunction solar cells. Although such films may …

Effects of (i)a‐Si:H deposition temperature on high‐efficiency silicon heterojunction solar cells

Y Zhao, P Procel, A Smets, L Mazzarella… - Progress in …, 2023 - Wiley Online Library
Excellent surface passivation induced by (i) a‐Si: H is critical to achieve high‐efficiency
silicon heterojunction (SHJ) solar cells. This is key for conventional single‐junction cell …

Progress on the intrinsic a-Si: H films for interface passivation of silicon heterojunction solar cells: A review

J Panigrahi, VK Komarala - Journal of Non-Crystalline Solids, 2021 - Elsevier
Amorphous/crystalline silicon heterojunction (SHJ) solar cells are well known for their
inherent high open-circuit voltage (V OC) potential, much better temperature coefficient …

Damp-heat-stable, high-efficiency, industrial-size silicon heterojunction solar cells

W Liu, L Zhang, X Yang, J Shi, L Yan, L Xu, Z Wu… - Joule, 2020 - cell.com
Silicon heterojunction (SHJ) solar cells employ nanometer-thin stacks of intrinsic and doped
hydrogenated amorphous silicon (a-Si: H) films as carrier-selective contacts. To achieve …