Memristive devices, which combine a resistor with memory functions such that voltage
pulses can change their resistance (and hence their memory state) in a nonvolatile manner …

Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …

Three-dimensional monolithic integration of memory devices with logic transistors is a
frontier challenge in computer hardware. This integration is essential for augmenting …

In neuromorphic hardware, peripheral circuits and memories based on heterogeneous
devices are generally physically separated. Thus, exploration of homogeneous devices for …

The discovery of ferroelectricity in oxides that are compatible with modern semiconductor
manufacturing processes, such as hafnium oxide, has led to a re-emergence of the …

Traditional von Neumann computing systems involve separate processing and memory
units. However, data movement is costly in terms of time and energy and this problem is …

In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs)
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …

Ferroelectric materials have been intensively investigated for high‐performance nonvolatile
memory devices in the past decades, owing to their nonvolatile polarization characteristics …

Emerging memories have been developed as new physical infrastructures for hosting neural
networks owing to their low-power analog computing characteristics. However, accurately …

Computing in memory (CIM) could be used to overcome the von Neumann bottleneck and to
provide sustainable improvements in computing throughput and energy efficiency …