High mobilities in layered InSe transistors with indium‐encapsulation‐induced surface charge doping
Tunability and stability in the electrical properties of 2D semiconductors pave the way for
their practical applications in logic devices. A robust layered indium selenide (InSe) field …
their practical applications in logic devices. A robust layered indium selenide (InSe) field …
Poly-GeSn junctionless P-TFTs featuring a record high I ON/I OFF ratio and hole mobility by defect engineering
CP Chou, YX Lin, KY Hsieh, YH Wu - Journal of Materials Chemistry C, 2019 - pubs.rsc.org
2-Stage defect engineering of poly-GeSn (Sn:∼ 5.1%) film for bottom-gate junctionless P-
channel thin film transistors (JL P-TFTs), including gas annealing and plasma treatment, is …
channel thin film transistors (JL P-TFTs), including gas annealing and plasma treatment, is …
Experimental investigation on On–Off current ratio behavior near onset voltage for a pentacene based organic thin film transistor
A El Amrani, A Es-Saghiri, EM Boufounas… - The European Physical …, 2018 - epjap.org
The performance of a pentacene based organic thin film transistor (OTFT) with
polymethylmethacrylate as a dielectric insulator and indium tin oxide based electrical gate is …
polymethylmethacrylate as a dielectric insulator and indium tin oxide based electrical gate is …
一种适用于准谐振AC/DC 控制芯片的波谷检测电路
张伟东 - 2008 - chinaelectrondevices.seu.edu.cn
设计了一种适用于准谐振反激式AC/DC (交流/直流) 控制芯片的波谷电压检测电路.
根据反激式变换器辅助绕组电压的特点, 在一个开关周期内对辅助绕组电压采用三种不同的处理 …
根据反激式变换器辅助绕组电压的特点, 在一个开关周期内对辅助绕组电压采用三种不同的处理 …
Halo LDD 结构多晶硅薄膜晶体管的模拟研究
刘小红 - 2008 - chinaelectrondevices.seu.edu.cn
提出了多晶硅薄膜晶体管的一种Halo LDD 新结构, 这种结构是在基于LDD 结构的基础上,
在沟道靠近源, 漏端引入高掺杂的Halo 区. 并利用工艺和器件模拟软件对该Halo LDD P-Si TFT …
在沟道靠近源, 漏端引入高掺杂的Halo 区. 并利用工艺和器件模拟软件对该Halo LDD P-Si TFT …
Experimental investigation on On–Off current ratio behavior near onset voltage for a pentacene based organic thin film transistor.
AE Amrani, A Es-saghiri… - European Physical …, 2018 - search.ebscohost.com
The performance of a pentacene based organic thin film transistor (OTFT) with
polymethylmethacrylate as a dielectric insulator and indium tin oxide based electrical gate is …
polymethylmethacrylate as a dielectric insulator and indium tin oxide based electrical gate is …