High‐performance thin‐film transistors (TFTs) integrated circuits (ICs) have become
increasingly necessary to meet the emerging demands such as healthcare, edge computing …

Silicon and other inorganic semiconductor nanowires (NWs) have been extensively
investigated in the last two decades for constructing high‐performance nanoelectronics …

Toxic gas monitoring at room temperature (RT) is of great concern to public health and
safety, where ultrathin silicon nanowires (SiNWs), with diameter< 80 nm, are ideal one …

The past two decades have witnessed breakthroughs in cellular‐scale bioelectronics and
their widespread applications in life sciences, creating many powerful platforms for studying …

Fabricating ultrathin silicon (Si) channels down to critical dimension (CD)< 10 nm, a key
capability to implementing cutting‐edge microelectronics and quantum charge‐qubits, has …

Line-shape engineering is a key strategy to endow extra stretchability to 1D silicon
nanowires (SiNWs) grown with self-assembly processes. We here demonstrate a …

Assembling nanoscale building blocks into an orderly network with a programmable layout
and channel designs represents a critical capability to enable a wide range of stretchable …

Quasi‐1D silicon nanowires (SiNWs) field effect transistors (FETs) integrated upon large‐
area elastomers are advantageous candidates for developing various high‐performance …

Bottom-up catalytic growth offers a high-yield, versatile, and powerful tool for the
construction of versatile 3D nanocomplexes, while the major challenge is to achieve a …

Graphene nanoribbons are ideal candidates to serve as highly conductive, flexible, and
transparent interconnections, or the active channels for nanoelectronics. However …