Surface photovoltage spectroscopy of semiconductor materials for optoelectronic applications
V Donchev - Materials Research Express, 2019 - iopscience.iop.org
The present contribution reviews the basic principles of the surface photovoltage (SPV)
spectroscopy in the metal-insulator-semiconductor operation mode emphasizing on the …
spectroscopy in the metal-insulator-semiconductor operation mode emphasizing on the …
X-Ray-Induced Modification of the Photophysical Properties of MAPbBr3 Single Crystals
Methylammonium lead tribromide (MAPbBr3) perovskite single crystals demonstrate to be
excellent direct X-ray and gamma-ray detectors with outstanding sensitivity and low limit of …
excellent direct X-ray and gamma-ray detectors with outstanding sensitivity and low limit of …
Effect of two-step growth process on structural, optical and electrical properties of MOVPE-grown GaP/Si
A two-step growth process of gallium phosphide (GaP) epilayer on silicon substrate is
carried out using metal organic vapor-phase epitaxy (MOVPE). This process includes the …
carried out using metal organic vapor-phase epitaxy (MOVPE). This process includes the …
Band structure properties of novel BxGa1− xP alloys for silicon integration
N Hossain, TJC Hosea, SJ Sweeney… - Journal of Applied …, 2011 - pubs.aip.org
We have grown and investigated the band-structure properties of novel III-V alloys based
upon B x Ga 1− x P. These layers are utilized as strain-compensating layers for the lattice …
upon B x Ga 1− x P. These layers are utilized as strain-compensating layers for the lattice …
Automated system for surface photovoltage spectroscopy
This paper details the development of a lab-made experimental setup for surface
photovoltage spectroscopy (SPS) measurements using an open-source and Arduino® …
photovoltage spectroscopy (SPS) measurements using an open-source and Arduino® …
A correlation between the defect states and yellow luminescence in AlGaN/GaN heterostructures
AlGaN/GaN heterostructures are investigated by performing complementary spectroscopic
measurements under novel experimental configurations. Distinct features related to the …
measurements under novel experimental configurations. Distinct features related to the …
Studies on MOVPE growth of GaP epitaxial layer on Si (0 0 1) substrate and effects of annealing
Growth of gallium phosphide layer on silicon substrate has been carried out using metal-
organic vapor phase epitaxy. Epitaxial layers were grown at 845° C with a V/III ratio of 100 …
organic vapor phase epitaxy. Epitaxial layers were grown at 845° C with a V/III ratio of 100 …
Surface photovoltage studies of and quantum well structures
G Dumitras, H Riechert, H Porteanu, F Koch - Physical Review B, 2002 - APS
Surface photovoltage in GaAs-based type I strained quantum well structures is discussed.
First, a model for the photovoltage generation in our samples is presented. Then surface …
First, a model for the photovoltage generation in our samples is presented. Then surface …
Absorption edge determination of thick GaAs wafers using surface photovoltage spectroscopy
A procedure for choosing the appropriate chopping frequency (f) for the surface
photovoltage spectroscopy (SPS) measurements in order to obtain the absorption related …
photovoltage spectroscopy (SPS) measurements in order to obtain the absorption related …
Frequency and intensity dependence of the sub-band-gap features observed in the surface photovoltage spectrum of semi-insulating GaAs
TK Sharma, S Kumar, KC Rustagi - Journal of applied physics, 2002 - pubs.aip.org
Semi-insulating (SI), undoped GaAs is an important material, which is commonly used as a
substrate for the high performance integrated circuits as well as for epitaxial growth for many …
substrate for the high performance integrated circuits as well as for epitaxial growth for many …