We present a comprehensive series of electrical transport (conductivity, magnetoresistance,
and Hall effect), thermodynamic (specific heat, magnetic susceptibility, and magnetization) …

We review many-body effects, their microscopic origin, as well as their impact on
thermoelectricity in correlated narrow-gap semiconductors. Members of this class—such as …

An investigation of the relative stability of the FeSi structure and of some hypothetical
polymorphs of FeSi has been made by first-principles pseudopotential calculations. It has …

Local-density calculations of the electronic structure of FeSi, FeSi 1− x Al x, and Fe 1− x Ir x
Si systems in the B20 structure are presented. Pure FeSi has a semiconducting gap of 6 …

An investigation of the relative stability of the FeSi structure and of some hypothetical
polymorphs of FeSi has been made by first‐principles pseudopotential calculations. It has …

Local-density calculations of the electronic structure as a function of temperature T and
applied magnetic field H are presented for FeSi. The small band gap (6 mRy) makes FeSi …

Here, we report detailed investigations of the temperature dependent (100–800 K) electronic
structures of FeSi and CoSi by using a DFT+ DMFT method where self-consistently …

A large body of work has focused on resistivity saturation in systems where scattering is
caused by impurities or by thermal effects. Electrical resistivity saturation is here classified as …

The magnetization of high quality iron monosilicide single crystals has been studied in a
wide temperature and magnetic-field range. These data are analyzed by taking into account …

Magnetization process and susceptibility measurements at high pressures up to P= 12 kbar
have been performed on single-crystalline FeSi in the temperature range from T= 5 K to 300 …