Silicon carbide (SiC), a group IV compound and wide-bandgap semiconductor for high-
power, high-frequency and high-temperature devices, demonstrates excellent inherent …

Abstract 4H-SiC has recently attracted attention as a new power semiconductor material to
replace silicon. One of the challenges impeding its practical use is the elimination of killer …

Abstract 4H silicon carbide (4H-SiC) is one of the most promising candidates in high-power
and high-frequency devices, owing to its excellent properties such as wide bandgap, high …

A triangular single Shockley stacking fault (1SSF) in 4H-SiC, expanding from the surface to
the substrate/epilayer interface, was investigated. The triangular 1SSF was observed during …

Despite being a destructive technique, molten KOH etch pits at basal plane dislocations are
found to have informative aspects, as revealed by photoluminescence imaging and optical …

Dislocation in silicon has been studied from atomistic viewpoints for many years. It is widely
acknowledged that the bond-order Tersoff potential does not reproduce the dislocation …

The practical use of 4H-SiC as a semiconductor material alternative to Si has been
investigated by several researchers. However, a key challenge impeding its practical …

The analysis of bipolar degradation in 18 kV SiC IGBT with constant voltage stress was
studied. Its fabrication process as well as testing conditions of IGBT device structure were …

In order to reduce harmful dislocations in the 4H-SiC substrate, the improvement technique
of basal plane dislocation-threading edge dislocation (BPD-TED) conversion ratio has been …

Epitaxial defects such as threading screw dislocation (TSD), basal plane dislocation (BPD)
and so on will seriously reduce the reverse voltage or increase leakage current of power …