Peculiarities of erbium incorporation into ZnO microrods at high doping level leading to upconversion and the morphology change. Influence on excitonic as well as …

M Buryi, N Neykova, K Ridzoňová, Z Remeš… - Applied Surface …, 2023 - Elsevier
Heavily Er-doped zinc oxide (ZnO) microrods with nominal compositions, ZnO: Er (2, 10,
30%), were prepared by the hydrothermal growth method. The crystallographic phases …

Wafer‐scale PLD‐grown high‐κ GCZO dielectrics for 2D electronics

J Yu, G Gao, W Han, C Wei, Y Wang… - Advanced Electronic …, 2022 - Wiley Online Library
Oxide dielectrics, such as HfO2, Al2O3, etc, are widely used to improve the performance of
2D semiconductors in electronic devices. However, future low‐power electronic devices …

High Dielectric Transparent Film Tailored by Acceptor and Donor Codoping

D Huang, Y Shi, M Younas, RTA Khan, M Nadeem… - Small, 2022 - Wiley Online Library
High dielectric constant materials are of particular current interests as indispensable
components in transistors, capacitors, etc. In this context, there are emerging trends to …

Bandgap narrowing and hole self-trapping reduction in Ga2O3 by Bi2O3 alloying

F Matar, YL Shi, FCC Ling, A Salih, CP Irvine… - Journal of Alloys and …, 2023 - Elsevier
Ga 2 O 3 is an emerging material with attractive electrical properties for improving the
performance of high-voltage power electronics, and it is widely accepted that engineering its …