Thermal emission of current carriers from defects in semiconductors has been used as a
characterization technique for over 50 years. One of the most significant early publications …

A key strategy for further reducing the cost of solar electricity is through the development and
production of very-high efficiency silicon solar cells (> 25%). The challenge in achieving this …

Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated
during the fabrication of silicon samples and devices. The different mechanisms responsible …

The nonradiative recombination of excess charge carriers via deep levels induced by
transition-metal impurities in silicon is investigated experimentally. In order to reveal the …

Low-dose proton-and helium-implanted silicon was studied by deep-level transient
spectroscopy. By comparing the spectra as well as the defect level concentration profiles …

We present a theoretical investigation of excitonic Auger recombination via deep impurity
levels in semiconductors. A calculation of the transition matrix elements is carried out for …

The electronic structure of Cu, Ag, and Au impurities in silicon is studied self-consistently
using the quasiband crystal-field Green's-function method. We find that a substitutional …

With the remarkable advances in semiconductor processing, devices such as solar cells
have fewer and fewer defects that impact their performance. Determination of the defects …

Electronic grade Czochralski and float zone silicon in the as grown state have a very low
concentration of recombination generation centers (typically< 1010 cm− 3). Consequently, in …

Minority‐carrier recombination lifetimes have been extensively measured with a noncontact
laser/microwave method for metal‐doped p‐type Czochralski silicon crystals in the …