[HTML][HTML] Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

Y Qin, B Albano, J Spencer, JS Lundh… - Journal of physics D …, 2023 - iopscience.iop.org
Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …

[HTML][HTML] Time-gated Raman spectroscopy–a review

M Kögler, B Heilala - Measurement Science and Technology, 2020 - iopscience.iop.org
Time-gated (TG) Raman spectroscopy (RS) has been shown to be an effective technical
solution for the major problem whereby sample-induced fluorescence masks the Raman …

High‐spatial‐resolution surface‐temperature mapping using fluorescent thermometry

P Löw, B Kim, N Takama, C Bergaud - Small, 2008 - Wiley Online Library
The characterization of temperature and thermal properties is of particular importance in
micro-and nanotechnology. Considering the highly increased density of structures and the …

A review of direct drive proportional electrohydraulic spool valves: industrial state-of-the-art and research advancements

P Tamburrano, AR Plummer… - Journal of …, 2019 - asmedigitalcollection.asme.org
This paper reviews the state of the art of directly driven proportional directional hydraulic
spool valves, which are widely used hydraulic components in the industrial and …

Near-junction thermal management: Thermal conduction in gallium nitride composite substrates

J Cho, Z Li, M Asheghi… - Annual Review of Heat …, 2015 - dl.begellhouse.com
The thermal management challenge posed by gallium nitride (GaN) high-electron-mobility
transistor (HEMT) technology has received much attention in the past decade. The peak …

[HTML][HTML] A critical review on the junction temperature measurement of light emitting diodes

C Cengiz, M Azarifar, M Arik - Micromachines, 2022 - mdpi.com
In the new age of illumination, light emitting diodes (LEDs) have been proven to be the most
efficient alternative to conventional light sources. Yet, in comparison to other lighting …

Temperature-dependent characterization of AlGaN/GaN HEMTs: Thermal and source/drain resistances

R Menozzi, GA Umana-Membreno… - … on Device and …, 2008 - ieeexplore.ieee.org
This paper shows the application of simple dc techniques to the temperature-dependent
characterization of AlGaN/GaN HEMTs in terms of the following: 1) thermal resistance and 2) …

Simulation of thermal management in AlGaN/GaN HEMTs with integrated diamond heat spreaders

A Wang, MJ Tadjer, F Calle - Semiconductor science and …, 2013 - iopscience.iop.org
We investigated the impact of diamond heat spreading layers on the performance of
AlGaN/GaN high-electron-mobility-transistors (HEMTs). A finite element method was used to …

AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes

M Kuball, M Ťapajna, RJT Simms, M Faqir… - Microelectronics …, 2011 - Elsevier
A methodology based on combined electrical trapping analysis with UV-assisted
preparation of trap states and electroluminescence analysis was developed to gain detailed …

Microscale thermometry: A review

MM Kim, A Giry, M Mastiani, GO Rodrigues… - Microelectronic …, 2015 - Elsevier
Recent advancements in microelectromechanical systems (MEMS) have required state-of-
the-art techniques that provide accurate information of physical parameters such as fluid …