Comparison of MoS2/p‐GaN Heterostructures Fabricated via Direct Chemical Vapor Deposition...

[PDF] mdpi.com

Impact Fretting Wear of MoS2/C Nanocomposite Coating with Different Carbon Contents under Cycling Low Kinetic Energy

J Zhou, L Zhang, Y Ding, X Chen, Z Cai - Nanomaterials, 2021 - mdpi.com
MoS2/C nanocomposite coatings were deposited on a 304 stainless steel plate by
unbalanced magnetron sputtering from carbon and molybdenum disulfide targets, and the …
被引用次数：5 相关文章 所有 6 个版本

Dual-wavelength photodetector based on monolayer MoS2/GaN heterostructure

F Wang, D Chang, Z Wang, H Cui - Applied Physics A, 2022 - Springer
Gallium nitride (GaN) has been confined to ultraviolet (UV) detectors due to its
semiconductor characteristic with bandgap of 3.4 eV. In this work, we epitaxially grow two …
被引用次数：2 相关文章 所有 4 个版本
[PDF] semanticscholar.org

[PDF][PDF] Impact Fretting Wear of MoS2/C Nanocomposite Coating with Different Carbon Contents under Cycling Low Kinetic Energy. Nanomaterials 2021, 11, 2205

J Zhou, L Zhang, Y Ding, X Chen, Z Cai - 2021 - pdfs.semanticscholar.org
MoS2/C nanocomposite coatings were deposited on a 304 stainless steel plate by
unbalanced magnetron sputtering from carbon and molybdenum disulfide targets, and the …
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