Strained-layer quantum well materials grown by MOCVD for diode laser application
Strained-layer quantum wells have revolutionized the performance of near-infrared diode
lasers. Two primary factors leading to the prevalence of such materials are; 1) the ability for …
lasers. Two primary factors leading to the prevalence of such materials are; 1) the ability for …
Growth far from equilibrium: Examples from III-V semiconductors
TF Kuech, SE Babcock, L Mawst - Applied Physics Reviews, 2016 - pubs.aip.org
The development of new applications has driven the field of materials design and synthesis
to investigate materials that are not thermodynamically stable phases. Materials which are …
to investigate materials that are not thermodynamically stable phases. Materials which are …
Epitaxial growth of metastable semiconductor alloys
GB Stringfellow - Journal of Crystal Growth, 2021 - Elsevier
The desire to access new alloys with desirable properties for semiconductor devices has
moved the field of semiconductor epitaxial growth into the region of metastable alloys, ie …
moved the field of semiconductor epitaxial growth into the region of metastable alloys, ie …
[HTML][HTML] Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing
Laser diodes employing a strain-compensated GaAs 1− x Bi x/GaAs 1− y P y single quantum
well (SQW) active region were grown by organometallic vapor phase epitaxy (OMVPE). High …
well (SQW) active region were grown by organometallic vapor phase epitaxy (OMVPE). High …
Annealing-induced precipitate formation behavior in MOVPE-grown GaAs1− xBix explored by atom probe tomography and HAADF-STEM
The effects of a 45 min anneal at 800 C on the physical properties and microstructure of a
five-period GaAs 1− x Bi x/GaAs 1− y Bi y superlattice with y≠ x were studied using room …
five-period GaAs 1− x Bi x/GaAs 1− y Bi y superlattice with y≠ x were studied using room …
Laser diodes employing GaAs1− xBix/GaAs1− yPy quantum well active regions
Laser diodes employing strain-compensated GaAs 1− x Bi x/GaAs 1− y P y quantum well
(QW) active regions were grown by metalorganic vapor phase epitaxy (MOVPE). High …
(QW) active regions were grown by metalorganic vapor phase epitaxy (MOVPE). High …
[HTML][HTML] Single junction solar cell employing strain compensated GaAs0. 965Bi0. 035/GaAs0. 75P0. 25 multiple quantum wells grown by metal organic vapor phase …
Single junction solar cells employing 30-period and 50-period GaAs 0.965 Bi 0.035/GaAs
0.75 P 0.25 (Eg∼ 1.2 eV) multiple quantum wells (MQWs) as base regions were grown by …
0.75 P 0.25 (Eg∼ 1.2 eV) multiple quantum wells (MQWs) as base regions were grown by …
Impact of in-situ annealing on dilute-bismide materials and its application to photovoltaics
Abstract GaAs 1− x Bi x/GaAs multiple quantum well heterostructures were grown by organo-
metallic vapor phase epitaxy (OMVPE) at low temperatures and were subsequently in-situ …
metallic vapor phase epitaxy (OMVPE) at low temperatures and were subsequently in-situ …
Atom probe tomography evidence for uniform incorporation of Bi across the growth front in GaAs1− xBix/GaAs superlattice
W Chen, PA Ronsheim, AW Wood, K Forghani… - Journal of Crystal …, 2016 - Elsevier
The three-dimensional distribution of Bi atoms in a GaAs 1− x Bi x/GaAs superlattice grown
by metalorganic vapor phase epitaxy (MOVPE) was studied using atom probe tomography …
by metalorganic vapor phase epitaxy (MOVPE) was studied using atom probe tomography …
Surface kinetics study of metal-organic vapor phase epitaxy of GaAs1− yBiy on offcut and mesa-patterned GaAs substrates
The influence of the surface step termination on the metal-organic vapor phase epitaxy of
GaAs 1− y Bi y was explored by examining the epitaxial layer growth rate, composition, and …
GaAs 1− y Bi y was explored by examining the epitaxial layer growth rate, composition, and …