A critical review of theory and progress in Ohmic contacts to p-type SiC
L Huang, M Xia, X Gu - Journal of Crystal Growth, 2020 - Elsevier
Silicon carbide (SiC) is a promising candidate in high-temperature, high-frequency and high-
power applications due to its outstanding properties such as wide band gap, high critical …
power applications due to its outstanding properties such as wide band gap, high critical …
A 600° C TTL-based 11-stage ring oscillator in bipolar silicon carbide technology
Ring oscillators (ROs) are used to study the high-temperature characteristics of an in-house
silicon carbide (SiC) technology. Design and successful operation of the in-house-fabricated …
silicon carbide (SiC) technology. Design and successful operation of the in-house-fabricated …
High-temperature recessed channel SiC CMOS inverters and ring oscillators
M Ekström, BG Malm… - IEEE Electron Device …, 2019 - ieeexplore.ieee.org
Digital electronics in SiC find use in high-temperature applications. The objective of this
study was to fabricate SiC CMOS without using ion implantation. In this letter, we present a …
study was to fabricate SiC CMOS without using ion implantation. In this letter, we present a …
A silicon carbide 256 pixel UV image sensor array operating at 400° C
An image sensor based on wide band gap silicon carbide (SiC) has the merits of high
temperature operation and ultraviolet (UV) detection. To realize a SiC-based image sensor …
temperature operation and ultraviolet (UV) detection. To realize a SiC-based image sensor …
[HTML][HTML] Self-aligned contacts to ion implanted S/D regions in 4H-SiC
M Ekström, CM Zetterling - Materials Science in Semiconductor Processing, 2023 - Elsevier
The self-aligned silicide (salicide) process, where a metallic silicide is formed without
lithographic definition to both source/drain-regions and the gate, is important for devices …
lithographic definition to both source/drain-regions and the gate, is important for devices …
A 4H-SiC BJT as a switch for on-chip integrated UV photodiode
This letter presents the design, fabrication, and characterization of a 4H-SiC npn bipolar
junction transistor as a switch controlling an on-chip integrated pin photodiode. The …
junction transistor as a switch controlling an on-chip integrated pin photodiode. The …
Low temperature Ni/Si/Al ohmic contacts to p-type 4H-SiC
Y Xu, J Sui, F Cao, X Li, J Yang, Y Wang - Solid-State Electronics, 2021 - Elsevier
In this paper, we studied the electrical and structural properties of Ni/Si/Al Ohmic contacts to
p-type 4H-SiC. The p-type epilayer (NA= 1× 10 19 cm− 3) was grown on the N-type epilayer …
p-type 4H-SiC. The p-type epilayer (NA= 1× 10 19 cm− 3) was grown on the N-type epilayer …
Device Processing Chain and Processing SiC in a Foundry Environment
A Salemi, M Kang, W Sung… - … for Power Electronics …, 2021 - Wiley Online Library
This chapter covers the process integration of SiC MOSFETs. All fabrication steps along with
their required mask layout are described. Besides, the main challenges in the processing …
their required mask layout are described. Besides, the main challenges in the processing …
Effect of contact plug deposition conditions on junction leakage and contact resistance in multilevel CMOS logic interconnection device
Y Cui, JY Jeong, Y Gao, SG Pyo - Micromachines, 2020 - mdpi.com
Here, we developed the optimal conditions in terms of physical and electrical characteristics
of the barrier and tungsten (W) deposition process of a contact module, which is the segment …
of the barrier and tungsten (W) deposition process of a contact module, which is the segment …
Ohmic Contacts for Fabrication of SiC CMOS Devices
A Di Mauro - 2024 - search.proquest.com
Today's world of electronics is dominated by semiconductor devices which utilize silicon as
their substrate material. Though, silicon is not ideal for semiconductor devices in high …
their substrate material. Though, silicon is not ideal for semiconductor devices in high …