Lithography process window (PW) and CD uniformity (CDU) requirements are being
challenged with scaling across all device types. Aggressive PW and yield specifications put …

M. Terry et al.,“Behavior of lens aberrations as a function of wave length on KrF and ArF
lithography scanners.” Proc. SPIE Optical Microlithography XIV 4346, 15 (2001), 11 pages …

Patterning solutions based on ArF immersion lithography are the fundamental enablers of
device scaling. In order to meet the challenges of industry technology roadmaps, tool …

Double-patterning ArF immersion lithography continues to advance the patterning resolution
and overlay requirements and has enabled the continuation of semiconductor bit-scaling …

With the implementation of multi-patterning ArF-immersion for sub 20nm integrated circuits
(IC), advances in equipment monitoring and control are needed to support on-wafer yield …

Over the years, Lithography Engineers continue to focus on CD control, overlay and process
capability to meet current node requirements for yield and device performance. Reducing or …

In this paper we discuss a laser focus drilling technique which has recently been developed
for advanced immersion lithography scanners to increase the depth of focus and therefore …

Reducing lithography pattern variability has become a critical enabler of ArF immersion
scaling and is required to ensure consistent lithography process yield for sub-30nm device …

DUV immersion lithography (ArFi) continues to be the primary lithographic method for
semiconductor manufacturers. Use of ArFi lithography requires patterning budget …

As chipmakers continue to reduce feature sizes and shrink CDs on the wafer to meet
customer needs, Cymer continues developing light sources that enable advanced …