An aggressive scaling of conventional MOSFETs channel length reduces below 100nm and
gate oxide thickness below 3nm to improved performance and packaging density. Due to …

The study investigates the characteristics of a Dielectric Pocket Junctionless Gate All Around
(DP-JGAA) MOSFET. It analyses key electrostatic parameters, such as the relationship …

This paper presents the analytical approximation of device physics of heterojunction based
double gate (DG) Tunnel field effect transistors (TFETs) in terms of potential distribution …

Abstract A two-dimensional (2-D) analytical model for dual-material double gate (DMDG)
Silicon-on-Nothing (SON) MOSFETs is developed to study the effect of variation of both the …

The scaling constrains of conventional MOSFETs, requires the device architecture
modification without degrading the device performance. The p type gate-allaround dual …

Due to the continuous scaling of the MOS transistors it has become absolute necessary to
investigate for the new transistor architectures for better control of SCEs and HCEs. In …

As aggressive scaling of conventional MOSFETs channel length reduces below 100 nm and
gate oxide thickness below 3nm to improved performance and packing density. Due to this …

A comparative study of the single gate MOSFET (SG MOSFET), double-gate MOSFET (DG
MOSFET) and silicon-on-insulator MOSFET (SOI MOSFET) is done using MOSFET …

An effective way to get multiple threshold voltage modulation scheme in Silicon nano tube
FET combining unbalanced halo doping is proposed and verified by 3D TCAD Simulator …

In this work, we have studied the electrical performances and short channel behavior of n-
type multi-channel junctionless nanowire transistors (JLNTs) with two different gate …