Silicon is the dominant semiconductor for electronics, but there is now a growing need to
integrate such components with optoelectronics for telecommunications and computer …

Results of investigations into surface processes of the formation of germanium and silicon
nanostructures are analyzed. A mechanism of three-dimensional island nucleation and …

We present observations of quantum confinement and quantum-confined Stark effect
(QCSE) electroabsorption in Ge quantum wells with SiGe barriers grown on Si substrates, in …

We measured the quantum-confined Stark effect (QCSE) of several types of fluorescent
colloidal semiconductor quantum dots and nanorods at the single molecule level at room …

Создание полупроводниковых структур с новыми физическими свойствами является
основной задачей нанотехнологии, имеющей целью расширение пределов …

A method of forming a virtually defect free lattice mismatched nanoheteroepitaxial layer is
disclosed. The method includes forming an interface layer on a portion of a substrate. A …

In this paper, we present observations of quantum confinement and quantum-confined Stark
effect electroabsorption in Ge quantum wells with SiGe barriers grown on Si substrates …

The optical properties of type-II In As∕ Ga As 0.7 Sb 0.3 quantum dots (QDs) were
investigated by photoluminescence (PL). It is found that the peak position of PL spectra …

We report the intraband optical absorption influence on the tunneling currents in biased
gallium arsenide quantum dots. The energy levels and tunneling times are calculated using …

Magnetic semiconductor quantum dots with a few carriers represent an interesting model
system where ferromagnetic interactions can be tuned by voltage. By designing the …