Recent decades have witnessed flourishing prosperity of III-nitride emitters in solid-state
lighting and high-resolution displays. As one of the widely used substrates, sapphire shows …

Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …

Great progress made by heteroepitaxial growth technology encourages rapid development
of III‐nitride heteroepitaxial structures and their applications in extensive fields. Particularly …

Tunnel junctions (TJs) offer a unique approach to utilizing nonequilibrium tunneling injection
of holes and have demonstrated potential applications in ultraviolet (UV) emitters. However …

High-efficiency InGaN-based yellow light-emitting diodes (LEDs) with high brightness are
desirable for future high-resolution displays and lighting products. Here, we demonstrate …

High-quality epitaxial layers are directly related to internal quantum efficiency. The methods
used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light …

High-efficiency GaN-based green LEDs are of paramount importance to the development of
the monolithic integration of multicolor emitters and full-color high-resolution displays. Here …

In this Letter, we perform a comprehensive investigation on the optical characterization of
micro-sized deep-ultraviolet (DUV) LEDs (micro-LEDs) emitting below 280 nm, highlighting …

The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has
the potential to deliver high power and high frequency with performances surpassing …

AlGaN-based light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) spectral
range (210–280 nm) have demonstrated potential applications in physical sterilization …