Abstract 2D metal oxides have aroused increasing attention in the field of electronics and
optoelectronics due to their intriguing physical properties. In this review, an overview of …

Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for
fundamental nanoscale science and various technological applications. They are a …

The success of silicon as a dominant semiconductor technology has been enabled by its
moderate band gap (1.1 eV), permitting low-voltage operation at reduced leakage current …

Group III–VI compounds MIIIXVI (M= Ga, In; X= S, Se, Te) are one class of important 2D
layered materials and are currently attracting increasing interest due to their unique …

Due to the predicted excellent electronic properties superior to group VIB (Mo and W)
transition metal dichalcogenides (TMDs), group IVB TMDs have enormous potential in …

Semiconducting two-dimensional (2D) materials are studied intensively because of their
promising performance in diverse applications from electronics to energy storage and …

Semiconductor technology is currently impaired by the surface dangling bond of materials,
which introduces scattering and interface traps. 2D materials, especially transition metal …

In this paper, the electronic structure and photocatalytic mechanism of arsenene/HfS 2
heterojunction with the stable structure are explored systematically based on first-principles …

For the first time, large-area, vertically oriented few-layered hafnium disulfide (V-${{\rm
{HfS}}} _ {2} $) nanosheets have been grown by chemical vapor deposition. The individual …

2D layered semiconducting materials (2DLSMs) represent the thinnest semiconductors,
holding many novel properties, such as the absence of surface dangling bonds, sizable …