Surface potential and drain current analytical model of gate all around triple metal TFET
N Bagga, S Dasgupta - IEEE Transactions on Electron Devices, 2017 - ieeexplore.ieee.org
The impact of triple metal with unalike work functions on the gate all around (GAA) tunnel
FET is studied for the first time in this paper. An analytical model is introduced for surface …
FET is studied for the first time in this paper. An analytical model is introduced for surface …
Improved Performance of MoS2 Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO2/Al2O3
Y Xia, L Liu, X Tao, Y Tian, JP Xu - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
In this work, negative-capacitance field-effect transistors (NCFETs) based on Hf AlxOy
ferroelectric films are fabricated, and the effects of the Al content in Hf AlxOy films and the …
ferroelectric films are fabricated, and the effects of the Al content in Hf AlxOy films and the …
[PDF][PDF] Review of Tunnel Field Effect Transistor (TFET)
P Tamak, R Mehra - Int. Res. J. Eng. Tech, 2017 - academia.edu
The low consumption of power is depends upon lowering of voltage supply. In case of
MOSFET (Metal Oxide Semiconductor Field Effect Transistor), reduction in supply voltage …
MOSFET (Metal Oxide Semiconductor Field Effect Transistor), reduction in supply voltage …
High density vertical field effect transistor multiplexer
BA Anderson, AM Chu - US Patent 9,859,898, 2018 - Google Patents
ABSTRACT A method for forming a multiplexor integrated circuit includes employing four
complementary pairs of vertical field effect transistor (VFET) pairs, each of the complemen …
complementary pairs of vertical field effect transistor (VFET) pairs, each of the complemen …
Effect of metal work function of asymmetric dielectric tunnel FET on its performance
NK Niranjan, S Choudhury, M Choudhury… - Microsystem …, 2021 - Springer
In the present era, with the advancement of various non-conventional devices, hardware
components dimensions are shrinking to great extent. Among those, significant part of …
components dimensions are shrinking to great extent. Among those, significant part of …
A Comparative Study of Material Impact on Tunnel Field-Effect Transistor (TFET) Performance
This comprehensive review offers a thorough analysis of the current state of Tunnel Field
Effect Transistor (TFET) technology, focusing on its recent advancements, challenges, and …
Effect Transistor (TFET) technology, focusing on its recent advancements, challenges, and …
Progress in submicron device technology
Scaling of Metal Oxide Semiconductor (MOS) devices under submicron range experiences
high device power dissipation due to large leakage current caused by Short Channel Effects …
high device power dissipation due to large leakage current caused by Short Channel Effects …
[PDF][PDF] Tunnel field effect transistors for digital and analog applications: a review
Objectives: This paper presents the review of Tunnel FET (TFET) to overcome the major
challenges faced by the conventional MOSFET. Analysis: Various device structures and …
challenges faced by the conventional MOSFET. Analysis: Various device structures and …
Impact of hetero-dielectric engineering on the performance of single gate tunnel FET
Tunnel field-effect transistor (TFET) is one of the potential substitutes for conventional
MOSFET in low-power energy-efficient circuits. However, TFETs suffer from low on-current …
MOSFET in low-power energy-efficient circuits. However, TFETs suffer from low on-current …
Electrical Characteristics and Reliability Analysis of Hetero-dielectric Dual Tunnel Diode TFET
P Ghosh - 2023 IEEE 33rd International Conference on …, 2023 - ieeexplore.ieee.org
This paper presents a hetero-dielectric dual tunnel diode (HD-DTD) TFET formed by p++
type highly doped L-shaped trench with hetero gate dielectric and its electrical parameters …
type highly doped L-shaped trench with hetero gate dielectric and its electrical parameters …