Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …

Ultra-wide bandgap materials show great promise as a solution to some of the limitations of
current state of the art semiconductor technology. Among these, diamond has exhibited …

Field-effect transistors made of wide-bandgap semiconductors can operate at high voltages,
temperatures and frequencies with low energy losses, and are important for power and high …

Power and RF electronics applications have spurred massive investment into a range of
wide and ultrawide bandgap semiconductor devices which can switch large currents and …

With its remarkable electro-thermal properties such as the highest known thermal
conductivity (~ 22 W cm− 1 bold dot K− 1 at RT of any material, high hole mobility (> 2000 …

With its outstanding physical properties, single‐crystal diamond is the material of choice for
future power electronics and quantum devices. The later application field is based on the …

Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a
renaissance exemplified by advances in material-level understanding, extensions of known …

Progress in power electronic devices is currently accepted through the use of wide bandgap
materials (WBG). Among them, diamond is the material with the most promising …

Diamond hosts a wide variety of colour centres that have demonstrated outstanding optical
and spin properties. Among them, the nitrogen-vacancy (NV) centre is by far the most …

Since 1797, when Tennant demonstrated that diamond consists solely of elemental carbon
by comparing the volume of carbon dioxide formed by burning identical weights of charcoal …