Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the
synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one …

The authors report on the use of hollow cathode plasma for low-temperature plasma-
assisted atomic layer deposition (PA-ALD) of crystalline AlN, GaN and AlxGa1− xN thin films …

Crystalline aluminum nitride (AlN) films have been prepared by plasma‐enhanced atomic
layer deposition (PEALD) within the temperature range from 100 to 500° C. A self‐limiting …

The influence of growth parameters on the properties of AlN films fabricated by plasma-
enhanced atomic layer deposition using trimethylaluminum and ammonia precursors was …

We report on the self-limiting growth and characterization of aluminum nitride (AlN) thin
films. AlN films were deposited by plasma-enhanced atomic layer deposition on various …

A plasma-enhanced atomic layer deposition (ALD) process was developed for the growth of
SiN x thin films using Si2Cl6 and NH3 plasma. At substrate temperatures≤ 400° C, we show …

This work demonstrates intrinsic area-selective deposition of AlN films by thermal atomic
layer deposition (ALD). Using sequential pulses of trimethylaluminum and NH3 at a …

Resistive random-access memories (RRAM) have been extensively studied because of their
advantages such as low operating voltage, high reliability, and simple structure. Among the …

The influence of N2/H2 and ammonia as N source materials on the properties of AlN films
grown by plasma enhanced atomic layer deposition using trimethylaluminum as metal …