Electrical detection of domain evolution in magnetic Weyl semimetal submicrometer-wide wire devices

J Shiogai, J Ikeda, K Fujiwara, T Seki, K Takanashi… - Physical Review …, 2022 - APS
Microscopic understanding of magnetization switching via domain nucleation and/or domain-
wall propagation is fundamental knowledge for developing magnetic and spintronic devices …

Structure, Magnetotransport, and Theoretical Study on the Layered Antiferromagnet Topological Phase EuCd2As2 under High Pressure

Z Yu, X Chen, W Xia, N Wang, X Lv… - Advanced Quantum …, 2023 - Wiley Online Library
Rich nontrivial topological phases rooted in the interplay between magnetism and topology
in the layered antiferromagnet EuCd2As2 have captured vast attention, especially the ideal …

Butterfly-shaped magnetoresistance in van der Waals ferromagnet Fe5GeTe2

T Ohta, M Tokuda, S Iwakiri, K Sakai, B Driesen… - AIP Advances, 2021 - pubs.aip.org
We have performed magnetoresistance (MR) measurements on van der Waals
ferromagnetic devices using quenched-(Q-) and nonquenched-(NQ-) Fe5GeTe2 crystals. A …

1 : 1 Ca2+:Cu2+ A‐site Order in a Ferrimagnetic Double Double Perovskite

E Solana‐Madruga, PS Kearins, C Ritter… - Angewandte …, 2022 - Wiley Online Library
Cation ordering in ABX3 perovskites is important to structural, physical and chemical
properties. Here we report discovery of CaCuFeReO6 with the tetragonal AA′ BB′ O6 …

Planar-symmetry-breaking induced antisymmetric magnetoresistance in van der Waals ferromagnet Fe3GeTe2

P Liu, C Liu, Z Wang, M Huang, G Hu, J Xiang, C Feng… - Nano Research, 2022 - Springer
Recently discovered magnetic van der Waals (vdW) materials provide an ideal platform to
explore low-dimensional magnetism and spin transport. Its vdW interaction nature opens up …

Thickness dependence of magnetic and magnetotransport properties of textured Fe3O4 ferrimagnetic films on SiO2/n-Si (001)

VV Balashev, KS Ermakov, DA Tsukanov… - Journal of Alloys and …, 2023 - Elsevier
The efficient injection of spin-polarized charge carriers from a ferro-or ferrimagnet into a
semiconductor is an urgent problem. Half-metal magnetite (Fe 3 O 4) is an attractive …

Growth Process, Structure and Electronic Properties of Cr2GeC and Cr2-xMnxGeC Thin Films Prepared by Magnetron Sputtering

AS Tarasov, SA Lyaschenko, MV Rautskii… - Processes, 2023 - mdpi.com
The growth and phase formation features, along with the influence of structure and
morphology on the electronic, optical, and transport properties of Cr2GeC and Cr2 …

Structure, magnetic, and transport properties of epitaxial ZnFe2O4 films: An experimental and first-principles study

C Jin, P Li, W Mi, H Bai - Journal of Applied Physics, 2014 - pubs.aip.org
We investigated the structure, magnetic, and transport properties of ZnFe 2 O 4 (ZFO) by
both experimental and first-principles study. The epitaxial ZFO films prepared with various …

Epitaxial growth and magnetic properties of Fe3O4 films on TiN buffered Si (001), Si (110), and Si (111) substrates

H Xiang, F Shi, MS Rzchowski, PM Voyles… - Applied Physics …, 2010 - pubs.aip.org
Epitaxial Fe 3 O 4 thin films were grown on TiN buffered Si (001), Si (110), and Si (111)
substrates by dc reactive sputtering deposition. Both Fe 3 O 4 films and TiN buffer are fully …

Origin of the twofold and fourfold symmetric anisotropic magnetoresistance in epitaxial Fe3O4 films

P Li, C Jin, EY Jiang, HL Bai - Journal of Applied Physics, 2010 - pubs.aip.org
The angular dependence of anisotropic magnetoresistance (AMR) in epitaxial Fe 3 O 4 films
on several kinds of substrates has been investigated to explore the nature of AMR. All the …