Techniques and structures for controlling etch-back of a fin FET fin are described. One or
more layers may be deposited over the fin and etched. Etch-back of a planarization layer …

(57) ABSTRACT A semiconductor device including a fin active region pro truding from a
Substrate and an isolation region defining the fin active region, a gate pattern intersecting …

A buffer layer is deposited on a substrate. A first III-V semiconductor layer is deposited on the
buffer layer. A second III-V semiconductor layer is deposited on the first III-V semiconductor …

Fin mask structures are formed over a semiconductor material portion on a crystalline
insulator layer. A disposable gate structure and a gate spacer are formed over the fin mask …

(57) ABSTRACT A method provides a first substrate supporting an insulator layer having
trenches formed therein; filling the trenches using an epitaxial growth process with at least …

(57) ABSTRACT A fin-type field effect transistor comprising a substrate, at least one gate
structure, first spacers, second spacers and source and drain regions is described. The …

(57) ABSTRACT A method includes depositing a silicon layer, which includes first portions
over a plurality of strips, and second portions filled into trenches between the plurality of …

The present invention relates generally to semiconductor devices and more particularly, to a
structure and method of forming a fin using double trench epitaxy. The fin may be composed …

(57) ABSTRACT A method for forming a semiconductor device comprises forming an
insulator layer on a semiconductor Substrate, removing portions of the insulator layer to form …

The present invention relates generally to semiconductor devices and more particularly, to a
structure and method of forming a fin using double trench epitaxy. The fin may be composed …