Physical reservoir computing based on nanoscale materials and devices

Z Qi, L Mi, H Qian, W Zheng, Y Guo… - Advanced Functional …, 2023 - Wiley Online Library
Bioinspired computation systems can achieve artificial intelligence, bypassing fundamental
bottlenecks and cost constraints. Computational frameworks suited for temporal/sequential …

Hardware and information security primitives based on 2D materials and devices

A Wali, S Das - Advanced Materials, 2023 - Wiley Online Library
Hardware security is a major concern for the entire semiconductor ecosystem that accounts
for billions of dollars in annual losses. Similarly, information security is a critical need for the …

Selective Enhancement of Photoresponse with Ferroelectric‐Controlled BP/In2Se3 vdW Heterojunction

J Wang, C Liu, L Zhang, J Chen, J Chen… - Advanced …, 2023 - Wiley Online Library
Owing to the large built‐in field for efficient charge separation, heterostructures facilitate the
simultaneous realization of a low dark current and high photocurrent. The lack of an efficient …

One-Step Passivation of Both Sulfur Vacancies and SiO2 Interface Traps of MoS2 Device

B Ahn, Y Kim, M Kim, HM Yu, J Ahn, E Sim, H Ji… - Nano Letters, 2023 - ACS Publications
Transition metal dichalcogenides (TMDs) benefit electrical devices with spin–orbit coupling
and valley-and topology-related properties. However, TMD-based devices suffer from traps …

Ultrahigh Photoresponsivity of W/Graphene/β-Ga2O3 Schottky Barrier Deep Ultraviolet Photodiodes

M Labed, BI Park, J Kim, JH Park, JY Min, HJ Hwang… - ACS …, 2024 - ACS Publications
The integration of graphene with semiconductor materials has been studied for developing
advanced electronic and optoelectronic devices. Here, we propose ultrahigh …

Molybdenum Disulfide-Assisted Spontaneous Formation of Multistacked Gold Nanoparticles for Deep Learning-Integrated Surface-Enhanced Raman Scattering

W Kim, J Han, YJ Kim, H Lee, TG Kim, JH Shin… - ACS …, 2024 - ACS Publications
Several fabrication methods have been developed for label-free detection in various fields.
However, fabricating high-density and highly ordered nanoscale architectures by using …

MoS2 Field-Effect Transistor Performance Enhancement by Contact Doping and Defect Passivation via Fluorine Ions and Its Cyclic Field-Assisted Activation

AK Rai, AA Shah, J Kumar, S Chattaraj, AB Dar… - ACS …, 2024 - ACS Publications
MoS2-based field-effect transistors (FETs) and, in general, transition metal dichalcogenide
channels are fundamentally limited by high contact resistance (RC) and intrinsic defects …

Harnessing Physical Entropy Noise in Structurally Metastable 1T′ Molybdenum Ditelluride for True Random Number Generation

Y Liu, P Liu, Y Wen, Z Liang, S Liu, L Song, J Pei… - Nano Letters, 2024 - ACS Publications
True random numbers are crucial for various research and engineering problems. Their
generation depends upon a robust physical entropy noise. Here, we present true random …

High Responsivity in Monolayer MoS2 Photodetector via Controlled Interfacial Carrier Trapping

S Sahoo, MC Sahu, SK Mallik, AK Jena… - ACS Applied …, 2023 - ACS Publications
Two-dimensional transition metal dichalcogenides have garnered much attention in
potential advances in optoelectronic devices because of the enhanced photoresponsivity …

Ferroelectric-gated All 2D field-effect transistors with sub-60 mv/dec subthreshold swing

Z Liu, Y Sun, Y Ding, M Li, X Liu, Z Liu… - The Journal of Physical …, 2023 - ACS Publications
With the continuous scaling down of the modern integrated circuits, conventional metal-
oxide-semiconductor field effect transistors are becoming inefficient due to various nonideal …