This paper presents a wafer level packaged (WLP) RF-MEMS switch fabricated in a 0.13 μm
SiGe BiCMOS process technology for D-Band (110–170 GHz) applications. For the wafer …

In this work different SiGe-BiCMOS based technology platforms for mm-wave and radar
applications are presented. Based on the evolution of IHP BiCMOS technologies the …

This paper presents an RF-MEMS switch fabricated in a 0.13 μm SiGe BiCMOS process
technology for 240 GHz applications. The fabricated RF-MEMS switch provides a high …

In this work, an electromagnetic (EM) model and a small-signal (lumped-element) model of a
wafer-level encapsulated (WLE) radio frequency microelectromechanical systems (RF …

Technologies and topologies used in the design and fabrication of high power amplifiers are
considered deciding factor in the size, cost and performance of Transmit/Receive modules …

In this work, two high voltage LDMOS inverters, a charge pump and a differential ring
oscillator are designed and combined with a Ka-band RF-MEMS SPDT (single-pole double …

A 120–140 GHz frequency-switchable, very compact low-noise amplifier (LNA) fabricated in
a 0.13 µm SiGe: C BiCMOS technology is proposed. A single radio-frequency (RF) switch …

A level shifter with minimum static power consumption for a high side operation up to 42V
was designed. Due to a current leakage below 500 nA the high side voltage can be …

Nowadays, there has been an increased use of mobile devices and growth in the need for
information, and because of this, wireless systems with higher data rates and wider …

In this contribution results from two raindrop Doppler sensors operating at 24 GHz and 122
GHz will be presented. For signal processing short-time FFT and Hilbert transform are …