Si-based GeSn photodetectors toward mid-infrared imaging applications
The GeSn detector offers high-performance Si-based infrared photodetectors with
complementary metal-oxide-semiconductor (CMOS) technique compatibility. In this work, we …
complementary metal-oxide-semiconductor (CMOS) technique compatibility. In this work, we …
Emerging technologies in Si active photonics
Silicon photonics for synergistic electronic–photonic integration has achieved remarkable
progress in the past two decades. Active photonic devices, including lasers, modulators, and …
progress in the past two decades. Active photonic devices, including lasers, modulators, and …
Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K
A Si-based monolithic laser is strongly desired for the full integration of Si-photonics. Lasing
from the direct bandgap group-IV GeSn alloy has opened a new avenue, different from the …
from the direct bandgap group-IV GeSn alloy has opened a new avenue, different from the …
Room temperature lasing in GeSn microdisks enabled by strain engineering
The success of GeSn alloys as active material for infrared lasers could pave the way toward
a monolithic technology that can be manufactured within mainstream silicon photonics …
a monolithic technology that can be manufactured within mainstream silicon photonics …
Advances in GeSn alloys for MIR applications
Silicon photonics is widely used for near InfraRed (IR) applications up to 1.6 µm. It plays a
key role in short-range optical data communications. However, silicon photonics does not …
key role in short-range optical data communications. However, silicon photonics does not …
Investigation of GeSn strain relaxation and spontaneous composition gradient for low-defect and high-Sn alloy growth
Recent development of group-IV alloy GeSn indicates its bright future for the application of
mid-infrared Si photonics. Relaxed GeSn with high material quality and high Sn composition …
mid-infrared Si photonics. Relaxed GeSn with high material quality and high Sn composition …
Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation
We investigate the effect of strain on the morphology and composition of GeSn layers grown
on Ge/Si virtual substrates. By using buffer layers with controlled thickness and Sn content …
on Ge/Si virtual substrates. By using buffer layers with controlled thickness and Sn content …
Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 22.3%
The recent demonstration of the GeSn laser opened a promising route towards the
monolithic integration of light sources on the Si platform. A GeSn laser with higher Sn …
monolithic integration of light sources on the Si platform. A GeSn laser with higher Sn …
Progress on germanium–tin nanoscale alloys
Group IV alloys have attracted interest in the drive to create Si compatible, direct band gap
materials for implementation in complementary metal oxide semiconductor (CMOS) and …
materials for implementation in complementary metal oxide semiconductor (CMOS) and …
Growth and strain modulation of GeSn alloys for photonic and electronic applications
Z Kong, G Wang, R Liang, J Su, M Xun, Y Miao, S Gu… - Nanomaterials, 2022 - mdpi.com
GeSn materials have attracted considerable attention for their tunable band structures and
high carrier mobilities, which serve well for future photonic and electronic applications. This …
high carrier mobilities, which serve well for future photonic and electronic applications. This …