True random number generator based on the variability of the high resistance state of RRAMs
Hardware-based security primitives like True Random Number Generators (TRNG) have
become a crucial part in protecting data over communication channels. With the growth of …
become a crucial part in protecting data over communication channels. With the growth of …
Rram random number generator based on train of pulses
B Yang, D Arumí, S Manich, Á Gómez-Pau… - Electronics, 2021 - mdpi.com
In this paper, the modulation of the conductance levels of resistive random access memory
(RRAM) devices is used for the generation of random numbers by applying a train of RESET …
(RRAM) devices is used for the generation of random numbers by applying a train of RESET …
State: A test structure for rapid and reliable prediction of resistive ram endurance
H Aziza, J Postel-Pellerin… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Characterizing and quantifying the endurance of Resistive RAM devices is critical to assess
their reliability for integration in electronic systems. This paper proposes a novel …
their reliability for integration in electronic systems. This paper proposes a novel …
On the Reliability of RRAM-Based Neural Networks
Emerging device technologies such as Resistive RAMs (RRAMs) are under investigation by
many researchers and semiconductor companies; not only to realize eg, embedded non …
many researchers and semiconductor companies; not only to realize eg, embedded non …
A 200 kb/s 36 µw True Random Number Generator Based on Dual Oscillators for IOT Security Application
C Chen, S Li, C Song - Electronics, 2023 - mdpi.com
As a module of the internet of things (IOT) information security system, the true random
number generator (TRNG) plays an important role in overall performance. In this paper, a …
number generator (TRNG) plays an important role in overall performance. In this paper, a …
Electron trapping in HfO2 layer deposited over a HF last treated silicon substrate
LS Salomone, MV Cassani, M Garcia-Inza… - Microelectronic …, 2025 - Elsevier
Electron trapping in HfO 2-based MOS structures was studied through pulsed capacitance-
voltage (CV) technique. 10 nm HfO 2 layer was deposited by atomic layer deposition over a …
voltage (CV) technique. 10 nm HfO 2 layer was deposited by atomic layer deposition over a …
A lightweight reconfigurable RRAM-based PUF for highly secure applications
B Hajri, MM Mansour, A Chehab… - 2020 IEEE International …, 2020 - ieeexplore.ieee.org
Recently, the variability of resistive memory devices (RRAM) has become an attractive
feature for hardware security in the form of a Physically Unclonable Function (PUF) …
feature for hardware security in the form of a Physically Unclonable Function (PUF) …
[HTML][HTML] Oxide-Based Resistive RAM Analog Synaptic Behavior Assessment for Neuromemristive Systems
H Aziza - Memristors-the Fourth Fundamental Circuit Element …, 2023 - intechopen.com
Resistive RAM (RRAM) synaptic plasticity behavior is essential to enable future power-
efficient brain-inspired accelerators. In oxide-based RAM (so-called OxRAM), synaptic …
efficient brain-inspired accelerators. In oxide-based RAM (so-called OxRAM), synaptic …
Experimental analysis of oxide-based ram analog synaptic behavior
One of the important features of Resistive RAM (RRAM) is its conductance modulation,
which makes it suitable for neuromorphic computing systems. In this paper, the conductance …
which makes it suitable for neuromorphic computing systems. In this paper, the conductance …
True Random Number Generator Based on RRAM-Bias Current Starved Ring Oscillator
D Arumi, S Manich, A Gómez-Pau… - IEEE Journal on …, 2023 - ieeexplore.ieee.org
This work presents a resistive random access memory (RRAM)-bias current-starved ring
oscillator (CSRO) as true random number generator (TRNG), where the cycle-to-cycle …
oscillator (CSRO) as true random number generator (TRNG), where the cycle-to-cycle …