Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …

Solid-state self-powered UV detection is strongly required in various application fields to
enable long-term operation. However, this requirement is incompatible with conventionally …

A two-dimensional hole gas (2DHG) induced by polarization charges at the GaN/AlGaN
hetero-interface is attracting much attention because of its potential to develop p-channel …

In this Letter, a high-performance quasi-vertical GaN Schottky barrier diode (SBD) with low
leakage current and high on/off ratio based on a unique lateral polarity structure (LPS) is …

We conducted a comparative study on the characterization of Ga-polar and N-polar GaN
metal–insulator–semiconductor (MIS) Schottky contact with a SiNx gate dielectric. The …

Reducing off‐state and gate leakage current is crucial in the development of metal–insulator–
semiconductor high‐electron‐mobility transistors (MIS‐HEMTs). This work reports interface …

Herein, polarization‐induced self‐isolation free from process damages in AlGaN/GaN high‐
electron‐mobility transistor (HEMT) by the incorporation of lateral‐polarity structure (LPS) is …

AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with the advantages of
compact structure, long lifetime, and controllable wavelength, are promising in numerous …