Investigation of N+ SiGe juntionless vertical TFET with gate stack for gas sensing application
In this work, a novel N+ SiGe delta-doped gate stacked junctionless vertical tunnel field
transistor (N+ SiGe gate staked JL-VTFET) is proposed and investigated with its electrical …
transistor (N+ SiGe gate staked JL-VTFET) is proposed and investigated with its electrical …
Analytical and compact modeling analysis of a SiGe hetero-material vertical L-shaped TFET
This paper deals with the development of a novel 2-D analytical modeling of heterojunction
vertical L-shaped tunnel FET for characterisation of surface potential and drain current. The …
vertical L-shaped tunnel FET for characterisation of surface potential and drain current. The …
Design and investigation of SiGe heterojunction based charge plasma vertical TFET for biosensing application
This paper explores the Vertical tunnel FET with the introduced layer of SiGe within the
channel/source junction using TCAD. As Tunnel FETs smothered the 60 mV/decade …
channel/source junction using TCAD. As Tunnel FETs smothered the 60 mV/decade …
Design and analysis of ferro electric-tunneling junction-VTFET for RF/analog and linear application
S Singh - Silicon, 2022 - Springer
In this paper a new ferro material embedded structure is introduced between the tunneling
junction to gain and improve ON/OFF current ratio with steeper subthreshold slope. Various …
junction to gain and improve ON/OFF current ratio with steeper subthreshold slope. Various …
An improved analytical modeling and simulation of gate stacked linearly graded work function vertical TFET
In this paper, a 2D analytical potential model for n+ SiGe Gate stacked linearly graded work
function Vertical TFET (n+ SiGe GS-LGW-VTFET) is developed with incorporating the effect …
function Vertical TFET (n+ SiGe GS-LGW-VTFET) is developed with incorporating the effect …
Design and simulation-based analysis of triple metal gate with ferroelectric-SiGe heterojunction based vertical TFET for Performance Enhancement
In this work, a triple metal gate-ferroelectric material-with SiGe heterojunction based vertical
structure of Tunnel field effect transistor (TMG-FE-SiGe-VTFET) is proposed and …
structure of Tunnel field effect transistor (TMG-FE-SiGe-VTFET) is proposed and …
Reversible logic gates using quantum dot cellular automata (QCA) nanotechnology
VK Sharma - AI for big data-based engineering applications from …, 2023 - taylorfrancis.com
Power dissipation is the key factor that is considered while designing low-power circuits.
Complementary metal oxide semiconductor (CMOS) technology faces a major challenge in …
Complementary metal oxide semiconductor (CMOS) technology faces a major challenge in …
Investigation of N+ SiGe gate stacked V-TFET based on Dopingless charge plasma for gas sensing application
In this paper, a novel n+ SiGe pocket layer gate stacked VTFET doping less charge plasma
is proposed and analyzed using Silvaco TCAD simulation software. The proposed device …
is proposed and analyzed using Silvaco TCAD simulation software. The proposed device …
An accurate and full-range analytical current model for nanowire heterojunction TFET
Y Guan, Z Dou, J Lu, S Huang… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
In this article, we present a compact analytical model for the drain current of the nanowire
heterojunction tunneling field-effect transistor (FET). The model is developed by leveraging …
heterojunction tunneling field-effect transistor (FET). The model is developed by leveraging …
Design and Comparative Analysis of Gate Stack Silicon Doped HfO2 Ferroelectric Vertical TFET
In this work, a gate stack Silicon doped HfO2 ferroelectric vertical TFET is proposed and its
various performance parameters are investigated and compared with the high-K HfO2 …
various performance parameters are investigated and compared with the high-K HfO2 …