▪ Abstract New classes of Sn-containing group IV semiconductors are described. Novel CVD
routes lead to growth of a broad range of Ge1− y Sn y alloys and compounds directly on Si …

The E 0, E 0+ Δ 0, E 1, E 1+ Δ 1, E 0′, and E 2 optical transitions have been measured in
Ge 1− y Sn y alloys (y< 0.2) using spectroscopic ellipsometry and photoreflectance. The …

Single-phase Si 1− x− y Ge x Sn y alloys with random diamond cubic structures are created
on Si (100) via ultrahigh vacuum chemical vapor deposition reactions of SnD 4 with SiH 3 …

We report the first realization of fully-released and relaxed Ge 1-x Sn x structures on Ge
substrate. The coefficients of Raman peak shift a and b due to the alloy disorder and strain …

The Ge-Ge, Si-Si, and Si-Ge Raman frequencies in Ge 1− x− y Si x Sn y alloys were
measured for x⩽ 0.2 and y⩽ 0.1. The Ge-Ge and Si-Si mode frequencies are found to be …

The compositional dependence of the Ge–Ge Raman mode in SnGe alloys has been
measured in samples grown on Si substrates using a chemical vapor deposition technique …

We provide the parameters of Stillinger–Weber potentials for GeSiSn ternary mixed systems.
These parameters can be used in molecular dynamics (MD) simulations to reproduce …

This paper reviews recent Monte Carlo simulations within the empirical potential approach,
which give insights into fundamental aspects of the bulk and surface structure of group-IV …

The precipitation of germanium nanocrystals in amorphous carbon–germanium films allows
for the development of innovative devices, but the accurate control of both size and size …

To study the conditions for substitutional incorporation of carbon into Si layers, we grew
pseudomorphic Si1yCy/Si superlattices with absolute carbon concentrations between 0.3 …