Germanium (Ge) has played a key role in silicon photonics as an enabling material for
datacom applications. Indeed, the unique properties of Ge have been leveraged to develop …

The infrared technology is entering widespread use as it starts fulfilling a growing number of
emerging applications, such as smart buildings and automotive sectors. Majority of infrared …

The integration of Ge on Si for photonics applications has reached a high level of maturity:
Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge …

Germanium-on-silicon waveguides were modeled, fabricated and characterized at
wavelengths ranging from 7.5 to 11 µm. Measured waveguide losses are below 5 dB/cm for …

In less than a decade, the mid-infrared (mid-IR) spectral range (2.5-12 μm) has become a
key application for innovative silicon photonic devices because of the growing potential in …

The design, modeling, micro-fabrication, and characterization of an ultra-broadband Ge-on-
Si waveguide polarization rotator are presented. The polarization rotator is based on the …

In this work we theoretically investigate quantum confined Stark effect of intersubband
transitions in asymmetric Ge/SiGe quantum wells for intensity modulation in the mid-infrared …

In this work we theoretically investigate the possibility of observing strong coupling at mid-
infrared frequencies within the group-IV semiconductor material platform. Our results show …

The 8-band k· p parameters which include the direct band coupling between the conduction
and the valence bands are derived and used to model optical intersubband transitions in Ge …

A novel spectroscopy technique to enable the rapid characterization of discrete mid-infrared
integrated photonic waveguides is demonstrated. The technique utilizes lithography …