The era of information explosion is coming and information need to be continuously stored
and randomly accessed over long-term periods, which constitute an insurmountable …

Antimony telluride (Sb2Te3) based alloys are well known as promising thermoelectric
materials for near-room temperature applications. In this work, we present a simple and cost …

A systematic optimization of p‐type Sb2Te3 thermoelectric films made by potentiostatic
electrodeposition on Au and stainless steel substrates is presented. The influence of the …

Abstract Group IIIA elements, Al, Ga, or In, etc., doped Sb-Te materials have proven good
phase change properties, especially the superior data retention ability over popular …

Reversible switching between highly resistive (binary “0”) amorphous phase and low
resistive (binary “1”) crystalline phase of chalcogenide-based Phase Change Materials is …

For over a decade, phase-change materials have been widely researched using various
materials and methods. Despite efforts, the design of novel materials is nowhere near …

Amorphous thermal stability of Al-doped Sb 2 Te 3 films was investigated by high-
temperature X-ray diffraction from room temperature to 350 C, showing the structural …

The unique property of fast and reversible switching between SET (crystalline, highly
conductive) and RESET (amorphous, highly resistive) phases of phase change materials …

We investigated the deposition and the phase-change properties of In-doped GeTe thin films
obtained by plasma enhanced metalorganic chemical vapor deposition and doped with …

In-doped GeSbTe films were deposited by ion beam sputtering deposition (IBSD) using
Ge2Sb2Te5 (GST) and In3Sb1Te2 (IST) as targets. The phase change characteristics of the …