We demonstrate the ZnO homojunction fully obtained by the atomic layer deposition
technique at low temperature growth of 100–130 C. For the n-type partner of the junction we …

Abstract Zinc oxysulfide (Zn (O, S)) is widely used for photovoltaic and optoelectronic
devices because its electronic properties are tunable with adjustments to the S-to-O …

By codoping with a donor–acceptor pair through a two-step chemical method we have
succeed to obtain p-type ZnO thin films on glass. Firstly, a thin undoped ZnO seed layer was …

Here we report a novel hybrid structure composing of microsphere array (MA), Al
nanoparticles (Al-NPs), ZnO thin film (luminescence layer), Au nanoparticles (Au-NPs), and …

Transparent p-type ZnO: N thin films have been fabricated by the oxidation of n-type ZnxNy
films. The ZnxNy thin films on glass substrate were deposited by pulsed filtered cathodic …

Pure ZnO and Ce-doped ZnO nanofibers were synthesized via electrospinning-calcination
technique. The morphology, composition, structure, humidity sensing and photoelectric …

ZnO-based n/p homojunctions were fabricated by sputtering from a single zinc nitride target
at room temperature on metal or ITO-coated glass and Si substrates. A multi-target rf …

In this study, lithium-doped p-type ZnO thin film was achieved by applying optimized
parameters such as surfactant concentration and annealing temperature in sol–gel method …

The precursor of aluminum-doped zinc oxide nanocrystals modified by nitrogen atoms (N-
AZO) can be quantity-produced by ultrasonic–hydrothermal equipment. Then the N-AZO …

The photoluminescence spectra as well as their temperature dependence of the tellurium
and nitrogen (Te-N) codoped ZnO films have been investigated in detail. Explicit evidences …