A review on the low external quantum efficiency and the remedies for GaN-based micro-LEDs

S Hang, CM Chuang, Y Zhang, C Chu… - Journal of Physics D …, 2021 - iopscience.iop.org
GaN-based micro-size light-emitting diode (μLED) have emerged as a promising light
sources for a wide range of applications in displays, visible light communication etc. In …

progress in high performance III-nitride micro-light-emitting diodes

MS Wong, S Nakamura… - ECS Journal of Solid State …, 2020 - iopscience.iop.org
The developments of high performance InGaN based micro-light-emitting diodes (μLEDs)
are discussed. We first review the early demonstrations of μLEDs and the state-of-the-art …

On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si

J He, M Feng, Y Zhong, J Wang, R Zhou, H Gao… - Scientific reports, 2018 - nature.com
Direct bandgap III-V semiconductor lasers grown on silicon (Si) are highly desired for
monolithic integration with Si photonics. Fabrication of semiconductor lasers with a Fabry …

External Quantum Efficiency Enhancement of InGaN-Based Quantum Dot Green Micro-Light-Emitting Diode Arrays by Fabricating Full-A-Sided Triangular Mesa

P Zhang, Y Gu, Y Gong, H Hua, S Jin, W Yang… - ACS …, 2023 - ACS Publications
Efficient GaN-based green micro light-emitting diodes (micro-LEDs) are critical for novel full-
color displays. In this work, triangular-mesa micro-LED arrays with full-A-side (sample A) …

GaN microdisk with direct coupled waveguide for unidirectional whispering-gallery mode emission

CH To, WY Fu, KH Li, YF Cheung, HW Choi - Optics Letters, 2020 - opg.optica.org
Microdisks are excellent whispering-gallery mode (WGM) optical resonators, but their
emissions are invariably in-plane isotropic due to their circularities and thus difficult to be …

Optical analysis of III-nitride micro-light-emitting diodes with different sidewall treatments at low current density operation

MS Wong, S Gee, T Tak, S Gandrothula… - Japanese Journal of …, 2024 - iopscience.iop.org
In this work, the optical efficiency of III-nitride blue micro-LEDs (μLEDs) ranged from 5× 5 to
60× 60 μm 2 with different sidewall treatments at low current density range was investigated …

[HTML][HTML] Advances in InGaN-based RGB micro-light-emitting diodes for AR applications: Status and perspective

P Li, J Ewing, MS Wong, Y Yao, H Li, S Gandrothula… - APL Materials, 2024 - pubs.aip.org
Micro-light-emitting diodes (µLEDs) are gathering significant interest as a technology for
emerging micro-displays. However, µLEDs encounter numerous obstacles, including size …

[HTML][HTML] Improving the Light Extraction Efficiency of GaN-Based Thin-Film Flip-Chip Micro-LEDs through Inclined Sidewall and Photonic Crystals

M Liu, X Zheng - Electronics, 2024 - mdpi.com
Low light extraction efficiency (LEE) remains a critical bottleneck in the performance of
contemporary micro-light-emitting diodes (micro-LEDs). This study presents an innovative …

Smooth and Vertical Sidewall Formation for AlGaN-Based Electronic and Optoelectronic Devices

A Ghosh, AMDM Xavier, S Rajan… - ECS Journal of Solid …, 2024 - iopscience.iop.org
We report a two-step etching process involving inductively coupled plasma (ICP) etching
followed by wet chemical etching to achieve smooth and vertical sidewalls, being beneficial …

Improved performance of InGaN/GaN multiple-quantum-wells photovoltaic devices on free-standing GaN substrates with TMAH treatment

N Hu, T Fujisawa, T Kojima, T Egawa… - Solar Energy Materials …, 2024 - Elsevier
Photovoltaic PV devices necessitate both superior electrical properties and optical
absorption due to their unique operational requirements. This study introduces a method …