Preparation and characterization of UV-enhanced GaN/porous Si photodetector using PLA in liquid
The photoluminescence and optoelectronics properties are very important for gallium nitride
(GaN) nanoparticles in the applications of ultraviolet and blue optoelectronic devices. In this …
(GaN) nanoparticles in the applications of ultraviolet and blue optoelectronic devices. In this …
Synthesis of gallium nitride nanostructure using pulsed laser ablation in liquid for photoelectric detector
Gallium nitride (GaN) thin film was grown by Nd: YAG pulsed laser ablation with two laser
ablation energies. The optical band gaps and crystallinities of the specimens were studied to …
ablation energies. The optical band gaps and crystallinities of the specimens were studied to …
An investigation on GaN/porous-Si NO2 gas sensor fabricated by pulsed laser ablation in liquid
Pulsed-laser ablation in liquid was used to prepare GaN nanostructure. The P-type GaN
nanostructure was deposited onto the porous-silicon substrate through the drop-casting …
nanostructure was deposited onto the porous-silicon substrate through the drop-casting …
[PDF][PDF] Optical Investigations of GaN Deposited Nano Films Using Pulsed Laser Ablation in Ethanol.
We provide an optical study on GaN thin film testing created by pulsed laser (ablation) in
liquid. This study applied six different energies for ablated GaN nanoparticles in the liquid …
liquid. This study applied six different energies for ablated GaN nanoparticles in the liquid …
Redox mediator-enhanced charge storage in dimensionally tailored nanostructures towards flexible hybrid solid-state supercapacitors
Although extensive research has been performed on metal oxide-based supercapacitors
during recent years, they remain lacking in their intrinsic conductivity and stability. To resolve …
during recent years, they remain lacking in their intrinsic conductivity and stability. To resolve …
[PDF][PDF] Synthesized of GaN nanostructure using 1064 nm laser wavelength by pulsed laser ablation in liquid
In recent years, nanostructured substances are very interesting compared to their bulk
compared to their different physical features [1, 2]. Gallium nitride (GaN) Nanoparticles (NPs) …
compared to their different physical features [1, 2]. Gallium nitride (GaN) Nanoparticles (NPs) …
Nonthermal Plasma Synthesis of Gallium Nitride Nanoparticles: Implications for Optical and Electronic Applications
Group III nitrides, such as gallium nitride (GaN), play an important role in electroluminescent
devices and power electronics. They are also increasingly used as photocatalysts and …
devices and power electronics. They are also increasingly used as photocatalysts and …
Some of physical properties of neno GaN ablated using pulsed laser in ethanol
The gallium nitride (GaN) nanostructure thin film was prepared and deposited on the quartz,
silicon and porous silicon substrates by using pulsed laser ablation in liquid (PLAL) …
silicon and porous silicon substrates by using pulsed laser ablation in liquid (PLAL) …
Laser wavelength effect on GaN nanostructure films morphological properties deposited by PLD technique
Nanostructure thin films of gallium nitride (GaN) were prepared and deposited by using
pulse laser deposition (PLD) technique at three different laser wavelengths (1064, 532 and …
pulse laser deposition (PLD) technique at three different laser wavelengths (1064, 532 and …
Two-dimensional III-nitrides: A comprehensive DFT and thermodynamics studies
We used DFT simulations for a comprehensive investigation of the stability, corrected
electronic band gap, thermodynamic properties and bonding nature of the 2D III-nitrides …
electronic band gap, thermodynamic properties and bonding nature of the 2D III-nitrides …