Gallium nitride (GaN) is becoming a mainstream semiconductor for power and radio-
frequency (RF) applications. While commercial GaN devices are increasingly being adopted …

Since Moore's law driven scaling of planar MOSFETs faces formidable challenges in the
nanometer regime, FinFETs and Trigate FETs have emerged as their successors. Owing to …

We describe a 7-nm predictive process design kit (PDK) called the ASAP7 PDK, developed
in collaboration with ARM Ltd. for academic use. The PDK is realistic, based on current …

The atomically thin nature and exceptional electrical properties of 2D materials (2DMs) have
garnered significant interest in circuit applications. Researchers have developed circuits …

This work presents new compact models that capture advanced physical effects presented
in industry FinFETs. The presented models are introduced into the industry standard …

Compact models of transistors act as the link between semiconductor technology and circuit
design via circuit simulations. Unfortunately, compact model development and calibration is …

The gate-all-around (GAA) CNTFET is one of the most efficient types of CNTFETs which
provides the conditions for scaling the technology to 10 nm and beyond, due to the …

Device simulation has been explored and industrialized for over 40 years; however, it still
requires huge computational cost. Therefore, it can be further advanced using deep learning …

This modern treatise on compact models for circuit computer-aided design (CAD) presents
industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor …

To surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged
as the real alternative for use as the next generation device for IC fabrication technology …