GaN FinFETs and trigate devices for power and RF applications: Review and perspective
Gallium nitride (GaN) is becoming a mainstream semiconductor for power and radio-
frequency (RF) applications. While commercial GaN devices are increasingly being adopted …
frequency (RF) applications. While commercial GaN devices are increasingly being adopted …
FinFETs: From devices to architectures
D Bhattacharya, NK Jha - Advances in Electronics, 2014 - Wiley Online Library
Since Moore's law driven scaling of planar MOSFETs faces formidable challenges in the
nanometer regime, FinFETs and Trigate FETs have emerged as their successors. Owing to …
nanometer regime, FinFETs and Trigate FETs have emerged as their successors. Owing to …
[HTML][HTML] ASAP7: A 7-nm finFET predictive process design kit
We describe a 7-nm predictive process design kit (PDK) called the ASAP7 PDK, developed
in collaboration with ARM Ltd. for academic use. The PDK is realistic, based on current …
in collaboration with ARM Ltd. for academic use. The PDK is realistic, based on current …
Two‐Dimensional Semiconductors: From Device Processing to Circuit Integration
C Sheng, X Dong, Y Zhu, X Wang… - Advanced Functional …, 2023 - Wiley Online Library
The atomically thin nature and exceptional electrical properties of 2D materials (2DMs) have
garnered significant interest in circuit applications. Researchers have developed circuits …
garnered significant interest in circuit applications. Researchers have developed circuits …
BSIM-CMG: Standard FinFET compact model for advanced circuit design
JP Duarte, S Khandelwal, A Medury… - … 2015-41st European …, 2015 - ieeexplore.ieee.org
This work presents new compact models that capture advanced physical effects presented
in industry FinFETs. The presented models are introduced into the industry standard …
in industry FinFETs. The presented models are introduced into the industry standard …
Modeling emerging technologies using machine learning: Challenges and opportunities
Compact models of transistors act as the link between semiconductor technology and circuit
design via circuit simulations. Unfortunately, compact model development and calibration is …
design via circuit simulations. Unfortunately, compact model development and calibration is …
Performance analysis and enhancement of 10-nm GAA CNTFET-based circuits in the presence of CNT-metal contact resistance
MH Moaiyeri, F Razi - Journal of Computational Electronics, 2017 - Springer
The gate-all-around (GAA) CNTFET is one of the most efficient types of CNTFETs which
provides the conditions for scaling the technology to 10 nm and beyond, due to the …
provides the conditions for scaling the technology to 10 nm and beyond, due to the …
Deep learning algorithms for the work function fluctuation of random nanosized metal grains on gate-all-around silicon nanowire MOSFETs
Device simulation has been explored and industrialized for over 40 years; however, it still
requires huge computational cost. Therefore, it can be further advanced using deep learning …
requires huge computational cost. Therefore, it can be further advanced using deep learning …
[图书][B] Compact models for integrated circuit design: conventional transistors and beyond
SK Saha - 2015 - library.oapen.org
This modern treatise on compact models for circuit computer-aided design (CAD) presents
industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor …
industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor …
[图书][B] FinFET devices for VLSI circuits and systems
SK Saha - 2020 - taylorfrancis.com
To surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged
as the real alternative for use as the next generation device for IC fabrication technology …
as the real alternative for use as the next generation device for IC fabrication technology …