This work presents the SOI Junctionless Fin-FET characterization in Deep Cryogenic
behavior (DC-JLFET). Results show that the JLT device is well-suited for various operations …

This paper presents a Junction-less SOI FET with an embedded p+ layer (EP-JLFET) to
obtain extensive volume depletion in 14 nm channel length of the device. The p+ embedded …

This study focuses on investigating the doping effect of molybdenum oxide (MoO X) on a p-
type organic dinaphtho [2, 3-b: 2′, 3′-f] thieno [3, 2-b] thiophene (DNTT) thin-film transistor …

This work presents silicon-on-insulator (SOI) junction-less FETs (C-JLFET) with a pyramid
P+ area within the buried oxide region (PP-JLFET). The Silvaco software analysis shows …

Nano-ribbons with gate-all-around (GAA) architecture have been predicted to serve as next-
generation on-chip transistors, among which, the junctionless transistor (JLT) has emerged …

Linearity and intermodulation distortion are very crucial parameters for RFICs design.
Therefore, in this work, a detailed comparative analysis on linearity and intermodulation …

This work uses a superior depletion technique to present a junctionless silicon-on-insulator
(SOI) metal-oxide field-effect transistor (MOSFET) in a 14 nm regime. The suggested …

Junctionless metal–oxide‐semiconductor field‐effect transistors (MOSFETs) have emerged
as a promising alternative to conventional MOSFETs, offering simplified fabrication and …

This research focuses on a quantum model created using an entirely novel nanosheet FET.
The standard model describes the performance of a Gate-all-around (GAA) Junction-less …

This paper describes a unique approach for calculating the complete depletion area in
silicon-on-insulator (SOI) junctionless FETs (JL-FET). The suggested approach significantly …