In this paper, we will discuss the rapid progress of third-generation semiconductors with
wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This …

High‐quality imaging units are indispensable in modern optoelectronic systems for accurate
recognition and processing of optical information. To fulfill massive and complex imaging …

The interface between organic nanowires and metal layers plays a key role in determining
the photoresponse and noise characteristics of organic nanowires. Herein, nickel …

In this work, the effect of in situ SiNx grown with different carrier gas on the structural and
electrical properties of the SiNx/AlGaN/GaN MIS-HEMTs is studied. It was found that the …

Si/SiGe heterostructures are of high interest for high-mobility transistor and qubit
applications, specifically for operations below 4.2 K. In order to optimize parameters such as …

In this work, we report an effective room-temperature passivation strategy for GaN-on-Si high-
electron-mobility transistors (HEMTs) to improve device stability by introducing a spin-coated …

The prosperity of quantum computing has boosted the development of cryogenic electronics.
The wide bandgap gallium nitride (GaN)-based devices show the potential to develop such …

In this work, an enhancement-mode (E-mode) AlGaN/GaN-based high-electron-mobility
transistor (HEMT) with a graded AlGaN cap layer (GACL) is proposed and numerically …

In this letter, we present a charge-based model to describe the flicker/low-frequency noise
behavior in GaN HEMTs. We study flicker noise and introduce the model for frequencies …

Herein, a novel enhancement-mode (E-mode) GaN-based p-channel FETs (p-FETs) with a
linearly graded AlGaN (LGA) p-channel is proposed and numerically studied by Silvaco …