[PDF][PDF] Resists for sub-20-nm electron beam lithography with a focus on HSQ: state of the art
AE Grigorescu, CW Hagen - Nanotechnology, 2009 - Citeseer
In the past decade, the feature size in ultra large-scale integration (ULSI) has been
continuously decreasing, leading to nanostructure fabrication. Nowadays, various …
continuously decreasing, leading to nanostructure fabrication. Nowadays, various …
Recent progress in high resolution lithography
D Bratton, D Yang, J Dai… - Polymers for advanced …, 2006 - Wiley Online Library
The nanotechnology revolution of the past decade owes much to the science of lithography,
an umbrella term which encompasses everything from conventional photolithography to …
an umbrella term which encompasses everything from conventional photolithography to …
Advanced thin film technology for ultrahigh resolution X-ray microscopy
Further progress in the spatial resolution of X-ray microscopes is currently impaired by
fundamental limitations in the production of X-ray diffractive lenses. Here, we demonstrate …
fundamental limitations in the production of X-ray diffractive lenses. Here, we demonstrate …
Scanning probe lithography on calixarene towards single-digit nanometer fabrication
M Kaestner, IW Rangelow - International Journal of Extreme …, 2020 - iopscience.iop.org
Cost effective patterning based on scanning probe nanolithography (SPL) has the potential
for electronic and optical nano-device manufacturing and other nanotechnological …
for electronic and optical nano-device manufacturing and other nanotechnological …
Sub-50 nm feature sizes using positive tone molecular glass resists for EUV lithography
SW Chang, R Ayothi, D Bratton, D Yang… - Journal of Materials …, 2006 - pubs.rsc.org
Extreme ultra violet (EUV) lithography is one of the most promising next generation
lithographic techniques for the production of sub-50 nm feature sizes with applications in the …
lithographic techniques for the production of sub-50 nm feature sizes with applications in the …
Photon-beam lithography reaches 12.5 nm half-pitch resolution
We have printed dense line/space patterns with half-pitches as small as 12.5 nm in a
negative-tone calixarene resist using extreme ultraviolet (EUV) interference lithography. The …
negative-tone calixarene resist using extreme ultraviolet (EUV) interference lithography. The …
[图书][B] Photopolymers: photoresist materials, processes, and applications
K Nakamura - 2018 - taylorfrancis.com
Advancements in photopolymers have led to groundbreaking achievements in the
electronics, print, optical engineering, and medical fields. At present, photopolymers have …
electronics, print, optical engineering, and medical fields. At present, photopolymers have …
Electron beam lithography patterning of sub-10nm line using hydrogen silsesquioxane for nanoscale device applications
IB Baek, JH Yang, WJ Cho, CG Ahn, K Im… - Journal of Vacuum …, 2005 - pubs.aip.org
We investigated novel patterning techniques to produce ultrafine patterns for nanoscale
devices. Hydrogen silsesquioxane (HSQ) was employed as a high-resolution negative tone …
devices. Hydrogen silsesquioxane (HSQ) was employed as a high-resolution negative tone …
New photoresist based on amorphous low molecular weight polyphenols
T Hirayama, S Daiju, H Hada, J Onodera… - Journal of …, 2004 - jstage.jst.go.jp
抄録 We have investigated the possibility of amorphous low molecular weight polyphenols
as a chemically amplified positive-tone electron-beam (EB) resist. Two low molecular weight …
as a chemically amplified positive-tone electron-beam (EB) resist. Two low molecular weight …
Novel extreme ultraviolet (EUV)-resist material based on noria (water wheel-like cyclic oligomer)
H Kudo, Y Suyama, H Oizumi, T Itani… - Journal of Materials …, 2010 - pubs.rsc.org
The synthesis and properties of noria derivatives (noria-ADs) with pendant adamantate (AD)
groups were examined to assess the suitability of these compounds for application as …
groups were examined to assess the suitability of these compounds for application as …