Manipulating Single‐Photon Emission from Point Defects in Diamond and Silicon Carbide
Point defects in semiconductors are emerging as an important contender platform for
quantum technology (QT) applications, showing potential for quantum computing …
quantum technology (QT) applications, showing potential for quantum computing …
Silicon carbide photonics bridging quantum technology
In the last two decades, bulk, homoepitaxial, and heteroepitaxial growth of silicon carbide
(SiC) has witnessed many advances, giving rise to electronic devices widely used in high …
(SiC) has witnessed many advances, giving rise to electronic devices widely used in high …
Optical detection of magnetic resonance
D Suter - Magnetic Resonance, 2020 - mr.copernicus.org
The combination of magnetic resonance with laser spectroscopy provides some interesting
options for increasing the sensitivity and information content of magnetic resonance. This …
options for increasing the sensitivity and information content of magnetic resonance. This …
Spin-optical dynamics and quantum efficiency of a single V1 center in silicon carbide
Color centers in silicon carbide are emerging candidates for distributed spin-based quantum
applications due to the scalability of host materials and the demonstration of integration into …
applications due to the scalability of host materials and the demonstration of integration into …
Multi-photon multi-quantum transitions in the spin- silicon-vacancy centers of SiC
H Singh, MA Hollberg, AN Anisimov, PG Baranov… - Physical Review …, 2022 - APS
Silicon vacancy centers in silicon carbide are promising candidates for storing and
manipulating quantum information. Implementation of fast quantum gates is an essential …
manipulating quantum information. Implementation of fast quantum gates is an essential …
Room-temperature quantum sensing with photoexcited triplet electrons in organic crystals
H Singh, N D'Souza, K Zhong, E Druga… - arXiv preprint arXiv …, 2024 - arxiv.org
Quantum sensors have notably advanced high-sensitivity magnetic field detection. Here, we
report quantum sensors constructed from polarized spin-triplet electrons in photoexcited …
report quantum sensors constructed from polarized spin-triplet electrons in photoexcited …
Characterization of single shallow silicon-vacancy centers in
Shallow negatively charged silicon-vacancy centers have applications in magnetic quantum
sensing and other quantum applications. Vacancy centers near the surface (within 100 nm) …
sensing and other quantum applications. Vacancy centers near the surface (within 100 nm) …
Inverted fine structure of a 6H-SiC qubit enabling robust spin-photon interface
Controllable solid-state spin qubits are currently becoming useful building blocks for applied
quantum technologies. Here, we demonstrate that in a specific type of silicon-vacancy in the …
quantum technologies. Here, we demonstrate that in a specific type of silicon-vacancy in the …
Electron spin resonance in P-doped Si nanocrystals/SiC stacked structures with various dot sizes
T Sun, D Li, J Chen, J Han, T Zhu, W Li, J Xu… - Applied Surface …, 2023 - Elsevier
Doping in semiconductor nanocrystals have a significant impact on electronic structures and
the relative studies are needed in order to deeply understand the doping effect in nanoscale …
the relative studies are needed in order to deeply understand the doping effect in nanoscale …
Analysis, recent challenges and capabilities of spin-photon interfaces in Silicon carbide-on-insulator
Silicon-carbide (SiC) is a promising platform for long-distance quantum information
transmission via single photons, offering long spin coherence qubits, excellent electronic …
transmission via single photons, offering long spin coherence qubits, excellent electronic …