Forksheet (FS) FETs are a novel transistor architecture consisting of vertically stacked nFET
and pFET sheets at opposite sides of a dielectric wall. The wall allows reducing the p-to …

On-chip degradation monitors have recently gained significant relevance because they can
provide real-time estimations of IC reliability by exploiting the fundamental physics of BTI …

This work reports an on-chip heater structure fabricated in the Front End of Line (FEOL) on a
versatile ring-oscillator (RO) array utilized to conduct statistical characterization of on-chip …

We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a
wide range of gate and drain voltages (V gs and V ds, respectively). Special attention is paid …

We report TCAD simulation studies on nanowire (NW), nanosheet (NS) and forksheet (FS)
FET hot-carrier relia-bility. The simulations entail i) solving the Boltzmann transport equation …

We report measurements of multiple hot-carrier (HC) stress and high-temperature anneal
cycles repeated on the same nFETs fabricated in a commercial 40-nm bulk CMOS …

Integrated circuits (IC) are the heart of all electronic systems in critical sectors like
automotive, aerospace, or healthcare, in key infrastructures like telecommunications …

In this study, the gate induced drain leakage (GIDL) of Si p-FinFET and its recovery effect on
hot carrier degradation (HCD) were experimentally studied to further its physical …

A combination of hot-carrier degradation (HCD) and self-heating (SH) was acknowledged to
be the most detrimental reliability issue in ultra-scaled field-effect-transistors (FETs) with …

Stress-induced damage in a MOSFET can be cured by Joule heating, which can be
produced by an intentional forward junction current (). This curing effect can be further …